Influence of the sample morphology on total reflection X-ray fluorescence analysis

Horntrich, C.; Meirer, Florian; Streli, Christina; Kregsamer, P.; Pepponi, G.; Zoeger, N.; Wobrauschek, P.

doi:10.1154/1.3131804

Cited by 11 publications

(10 citation statements)

References 22 publications

(24 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An interesting application took advantage of the phenomenon of X-ray standing waves (XSW), where the interference field of X-rays was used as a very fine and sensitive measure for the characterisation of surface layers to determine nanometer modifications perpendicular to the surface. Horntrich et al 107 also dealt with fundamental aspects of TXRF in their study of how total (>200 ng) amounts of sample caused deviations from the linear relationship between fluorescence intensity and sample mass. Samples with different total amounts of arsenic were prepared for the determination of the upper limit of sample mass where this linear relationship between fluorescence intensity and sample amount was no longer certain.…”

Section: Txrf 61 Fundamental Txrf Research and Instrumentationmentioning

confidence: 99%

Atomic spectrometry update–X-ray fluorescence spectrometry

West

Ellis

Potts

et al. 2010

J. Anal. At. Spectrom.

View full text Add to dashboard Cite

Section: Txrf 61 Fundamental Txrf Research and Instrumentationmentioning

confidence: 99%

Atomic spectrometry update–X-ray fluorescence spectrometry

West

Ellis

Potts

et al. 2010

J. Anal. At. Spectrom.

View full text Add to dashboard Cite

“…A slightly different approach was presented in Ref. [44] where, in order to calculate the influence of the absorption effects, the sample surface was considered to be made of a series of small towers of variable height and width.…”

Section: Angular Profiles Of Dense Particle Distributionsmentioning

confidence: 99%

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

Nowak

Banaś

Błchucki

et al. 2014

Spectrochimica Acta Part B: Atomic Spectroscopy

View full text Add to dashboard Cite

Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle-and layer-like samples, the measured angular intensity profiles show additional periodicity-related features. The latter could be explained by a novel theoretical approach based on simple geometrical optics (GO) considerations. The new GO-based calculations were found to yield results in good agreement with experiment, also in cases where other theoretical approaches are not valid, e.g., periodic particle distributions with an increased surface coverage.

show abstract

“…Details can be found in Powder Diffraction Journal. 22 The following assumptions for the calculation were made:…”

Section: Simulation Modelmentioning

confidence: 99%

Influence of the excitation energy on absorption effects in Total Reflection X-ray Fluorescence analysis

Horntrich

Kregsamer

Smolek

et al. 2012

J. Anal. At. Spectrom.

Self Cite

View full text Add to dashboard Cite

Total Reflection X-ray Fluorescence (TXRF) analysis is a well-established analytical method in the semiconductor industry for the analysis of silicon wafer surfaces. To improve the detection limits of TXRF (given in at cm(-2)) for wafer surface analysis vapor phase decomposition-droplet collection (VPD-DC) is used to collect the impurities of the total surface in one droplet. This leads to higher sample masses to be analyzed than in straight TXRF. In TXRF, absorption effects concerning the excitation and the detected radiation are usually disregarded. This is justified because mostly small sample amounts (pg to ng range) are used and the thin film approximation is valid. For higher total amounts of sample deviations from the linear relation between the fluorescence intensity and sample amount have been observed (saturation effect). These lead to difficulties in quantification with external standard, which is the calibration method used in TXRF wafer surface analysis. The content of the presented work is an investigation of the absorption phenomenon and hence the fluorescence intensity to improve the quantification of TXRF using VPD-DC. Samples with different total amounts of nickel were prepared and the emitted fluorescence intensities were measured at two different excitation energies to estimate the upper limit of sample mass where the relation between the fluorescence intensity and sample amount diverges from linearity depending on the excitation energy. The measurement results were compared to calculations performed with a self-developed simulation model. It could be verified that if the excitation energy is closer to the absorption edge of the excited element (which means better excitation) the saturation effect appears at a lower sample mass

show abstract

Influence of the sample morphology on total reflection X-ray fluorescence analysis

Cited by 11 publications

References 22 publications

Atomic spectrometry update–X-ray fluorescence spectrometry

Atomic spectrometry update–X-ray fluorescence spectrometry

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

Influence of the excitation energy on absorption effects in Total Reflection X-ray Fluorescence analysis

Contact Info

Product

Resources

About