Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

Li, Dabing; Sun, Xueqing; Song, Hang; Li, Zhiming; Chen, Yiren; Miao, Guoqing; Jiang, Hong

doi:10.1063/1.3536480

Cited by 77 publications

(59 citation statements)

References 14 publications

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“…A high performance UV-PDs needs high sensitivity. However, due to the high background carrier concentration and low photo gain, most UV-PDs suffer from low discrimination ratio between UV and dark/visible light, which limits the application of UV-PDs171819.…”

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confidence: 99%

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

Liang

Liu

et al. 2016

Sci Rep

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We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I-V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultraviolet (UV) photodetector, which may be potentially used as an active element in a UV imaging array. More significantly, the proper gate bias-control offers a new pathway to overcome the common persistent photoconductivity (PPC) effect problem. Additionally, the MgZnO:F as a channel layer was chosen to optimize the photoresponse properties, and the spectrum indicated a gate bias-dependent wavelengthselectable feature for different response peaks, which suggests the possibility to build a unique dualband UV photodetector with this new architecture.The classic three-terminal device such as field-effect transistor (FET) is, and always has been, the workhorse of the microelectronics industry. Today, as metal-oxide-semiconductor FET (MOSFET) technology gains a huge commercialized market, coupled with the sharp growth in oxide semiconductors thin film transistor (TFT) for displays, the demand for FETs continues to increase throughout the world-wide microcircuits, and has led to a rapid expansion of microprocessors, memory chips and active matrix et al. over the last more than four decades [1][2][3] . Despite these advantages of the transistors, the intrinsic advantage of three-terminal device has been proved as one of the best candidates for improving the low power consumption and high-sensitivity ultraviolet photodetectors (UV-PDs) such as ZnO based photodetectors 4-6 . As we all know, different types of UV-PDs based on ZnO have been reported early from 1950s 7,8 ; however, they mainly utilize two terminal devices, which include photoconductive, Schottky, and p/n-junction types 9-12 . Moreover, for these structures, there are two critical drawbacks to be overcome before the ZnO UV-PDs constructed on UV imaging or other applications: 1) The persistent photoconductivity (PPC) effect, which was extensively ascribed to the existence of metastable shallow donor state of oxygen vacancy (V O ) located within the bandgap of ZnO [13][14][15][16] . Especially under the illumination of short-wavelength light, the PPC can cause the semiconductor material to remain conductive for hours/days, even in the absence of light. This increases the response times and limits the frame rates. 2) Low photo gain. A high performance UV-PDs needs high sensitivity. However, due to the high background carrier concentration and low photo gain, most UV-PDs suffer from low discrimination ratio between UV and dark/visible light, which limits the application of UV-PDs [17][18][19] . To suppress the PPC effect in oxide UV-PDs and amplify the photo gain, the ability of three terminal photo-TFTs in controlling the position of the Fermi level and carrier densities has ...

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confidence: 99%

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

Liang

Liu

et al. 2016

Sci Rep

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“…These dislocation densities contribute significantly more to the leakage current of the device. Li et al [16] has studied the influenced of threading dislocations on the properties of GaN MSM UV PD and they observed that screw dislocations produce adverse effect on dark current. Screw dislocation is the path of carrier transportation.…”

Section: Resultsmentioning

confidence: 98%

Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

Kumar

Tekcan

Okyay

2014

Current Applied Physics

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A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and increased photo to dark current contrast ratio was achieved at 10 V. It was found that the dark current was drastically reduced by seven orders of magnitude at 10 V compared to samples without HfO2 insulating layer. The observed decrease in dark current is attributed to the large barrier height which is due to introduction of HfO2 insulating layer and the calculated barrier height was obtained as 0.95 eV. The peak responsivity of HfO2 inserted device was 0.44 mA/W at bias voltage of 15 V. © 2014 Published by Elsevier B.V

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“…using Eq (3), the barrier height at the Au/Al 0.400 In 0.02 Ga 0.58 N interface was calculated to be around 0.98 eV. It was reported that the screw threading dislocations (TDs) might reduce the height of the SBH between the epilayer and metal contact then result in higher dark current of the photodetector [16 ]. Since the lattice constant and the band gap of Al x In y Ga 1-x-y N alloys can be independent controlled by adjusting the quaternary composition, the dark current will be reduced as the lattice constant became closer to that of GaN.…”

Section: IIImentioning

confidence: 99%

Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection

Wang

Jiao

Sun

et al. 2012

2012 International Conference on Optoelectronics and Microelectronics

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High crystalline quality Al 0.40 In 0.02 Ga 0.58 N film has been achieved on GaN buffer by metalorganic vapor phase epitaxy (MOVPE). The metal-semiconductor-metal (MSM) structured visible blind photodetector was fabricated based on the Al 0.40 In 0.02 Ga 0.58 N film. The current-voltage measurement indicated an obvious Schottky behavior, the barrier height was calculated to be 0.98 eV. With an applied bias of 10 V, the photodetector showed a peak responsivity of 0.065 A/W at 295 nm with a cutoff wavelength at 310 nm. Furthermore, the ultraviolet-visible rejection ratio (R295 nm/R450 nm) was more than two orders of magnitude at 10 V bias. It was also found another response peak at 360 nm corresponding to the band gap of GaN, Which proved our photodetector can be used for dual band detection in ultraviolet region. In addition, it was also found that the slower increased of the responsivity when the |bias| was above 3V was attributed to radiative and Auger recombination.

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Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

Cited by 77 publications

References 14 publications

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection

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