Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Felix, J.A.; Schwank, J.R.; Cirba, C.R.; Schrimpf, R.D.; Shaneyfelt, M.R.; Fleetwood, D.M.; Dodd, P.E.

doi:10.1016/j.mee.2004.01.013

Cited by 15 publications

(5 citation statements)

References 50 publications

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“…[2] The resulting shift in the back gate threshold voltage may adversely affect device operation and circuit performance. [3,4] It has been reported that high fluence ion implantation (such as Al, Si, P or Ge) into the buried oxide can be used to reduce the shift in back gate threshold voltage during exposure to ionizing radiation by creating electron traps with a very large capture cross section and compensating for trapped positive charges when being filled with electrons. [4][5][6][7][8][9][10] For example, Mrstik et al [6] studied charge trapping in thermal oxides implanted with up to 5×10 15 cm −2 of Al, Si, P. They found that the capture cross section (1×10 −13 cm 2 ) is large in electron trap formed at the highest implant doses, while the shift of flat-band voltage following hole injection decreases, which indicates a reduction of hole trapping near the Si-SiO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Liu¹,

Chen

Liu

et al. 2015

Chinese Phys. B

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Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10−10 V2·Hz−1 and 2.7×10−8 V2·Hz−1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017 cm−3·eV−1 to 6.16×1018 cm−3·eV−1. Based on carrier mobility fluctuation theory, the extracted average Hooge’s parameter in these devices increases from 3.92×10−5 to 1.34×10−2 after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are −10.82 V and −31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

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Section: Introductionmentioning

confidence: 99%

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Liu¹,

Chen

Liu

et al. 2015

Chinese Phys. B

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“…The total threshold voltage shift for an nMOSFET is the sum of the threshold voltage shifts due to radiation induced oxide trap and interface trap charges. For SIMOX wafers, interface trap buildup can be neglected compared to oxide trapped charges for the radiation levels of this experiment [10] . Gamma rays can generate high densities of electron-hole pairs in the buried oxide, and electrons escaping initial recombination will rapidly drift toward the substrate at the bias of electric field.…”

Section: Resultsmentioning

confidence: 99%

“…Gamma rays can generate high densities of electron-hole pairs in the buried oxide, and electrons escaping initial recombination will rapidly drift toward the substrate at the bias of electric field. However, many of the holes will be trapped in the bulk of the oxide [10] , forming a net positive oxide trapped charge that causes negative threshold voltage shifts of the back-gate transistors. For control sample, there is a large positive charge buildup in the buried oxide with irradiation; even at a dose of 300 krad(Si), the drain current of the nMOS-FET is saturated at 0 V gate voltage that will seriously affect the top gate transistor.…”

Section: Resultsmentioning

confidence: 99%

Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers

Shuai¹,

Zhang²,

Bi³

et al. 2009

J. Semicond.

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Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen (SIMOX) materials by silicon ion implantation and annealing. The ID–VG characteristics of pseudo-MOS transistors pre- and post-irradiation are tested with 60Co gamma rays. The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission electron microscopy, respectively. The results show that Si nanocrystals in the buried oxide produced by ion implantation are efficient deep electron traps, which can significantly compensate positive charge buildup during irradiation. Si implantation can enhance the total-dose radiation tolerance of the fully-depleted SOI materials.

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“…In particular, owing to better resistance against transient ionization effects SOI technology has wide application in harsh radiation environment [1,2,3,4,5]. However, the thick buried oxide (BOX) layer threatens the reliability of SOI devices during ionizing radiation, in which the positive trapped charges will build up in the BOX after total ionizing dose, reducing the threshold voltage of back-gate transistor and increasing leakage current [6,7,8,9]. The radiation response of buried oxides has been found to be highly dependent on the device bias configuration during radiation, which determines the electrical field distribution in BOX [10,11,12,13,14,15,16,17,18].…”

Section: Introductionmentioning

confidence: 99%

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET

Zhu

Xie

et al. 2020

IEICE Electron. Express

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The total-ionizing-dose response of partially-depleted siliconon-insulator devices with or without grounded substrate under different irradiation bias is investigated. Compared with devices with grounded substrate, the devices with floating substrate introduces more trapped positive charges in buried oxide after irradiation, leading to larger negative shift of back-gate threshold voltage, especially for ON bias condition. Theoretical analysis and TCAD simulation demonstrate that, this phenomenon is attributed to the increased initial built-in field in buried oxide and weakened space charge effect under the case of floating substrate. According to this work, substrate terminal of SOI devices must be considered for integrated circuit design under radiation condition.

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Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Cited by 15 publications

References 50 publications

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET

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