Influence of transition elements doping on structural, optical and magnetic properties of BiFeO3 films fabricated by magnetron sputtering

Yan, Hurui; Deng, Hongmei; Ding, Nuofan; He, Jun; Peng, Lin; Sun, Lin; Yang, Pingxiong; Chu, Junhao

doi:10.1016/j.matlet.2013.08.075

Cited by 38 publications

(10 citation statements)

References 20 publications

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“…With increasing Eu content, the saturation magnetization M s of the BEFO x samples increases from 15.9 ± 0.9 emu/cm 3 to 86.9 ± 0.8 emu/cm 3 . The potential cause for macroscopic magnetization in BFO is the suppressed inhomogeneous spin structure [26,27]. The inhomogeneous spin structure of BFO is correlated to its R3c structure [28].…”

Section: Resultsmentioning

confidence: 99%

Structure, optical and magnetic properties of Bi 1−x Eu x FeO 3 films fabricated by pulsed laser deposition

Liu

Deng

Zhu

et al. 2014

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Structure, optical and magnetic properties of Bi 1−x Eu x FeO 3 films fabricated by pulsed laser deposition

Liu

Deng

Zhu

et al. 2014

Applied Surface Science

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“…A lot of studies also reported that the doping of transition metal ions (Co, Mn, Zn, etc.) at Fe sites could enhance the magnetoelectric properties of BFO [13][14][15]. However, it is difficult to reduce the leakage current density of BFO thin films by introducing the single ion [16].…”

Section: Introductionmentioning

confidence: 99%

Influence of Ni doping on the structural, ferroelectric, magnetic and optical properties of $$\hbox {Bi}_{0.85}\hbox {Nd}_{0.15}\hbox {Fe}_{1-x}\hbox {Ni}_{x}\hbox {O}_{3}$$ thin films

Wang

Han

2019

Bull Mater Sci

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Bi 0.85 Nd 0.15 Fe 1−x Ni x O 3 (x = 0.025-0.125) thin films were synthesized by applying a sol-gel method on fluorine-doped tin oxide substrates. The influence of Ni doping concentration on the structure, leakage current, ferroelectric, magnetic and optical properties of Bi 0.85 Nd 0.15 Fe 1−x Ni x O 3 thin films was investigated. Bi 0.85 Nd 0.15 Fe 1−x Ni x O 3 thin films are polycrystalline films that present a single perovskite structure without any impurity phase when the Ni doping concentration is below 0.1 and present a Bi 2 Fe 4 O 9 phase when the Ni doping concentration is above 0.1. The grain size of the films and their holes gradually decrease with an increase in the Ni doping amount. The saturation magnetization of Bi 0.85 Nd 0.15 Fe 1−x Ni x O 3 thin films increases with Ni content. However, appropriate Ni doping concentration can decrease the leakage current and enhance the ferroelectric polarization and optical transmittance of the films. Meanwhile, the absorption edge has a slight red shift. Bi 0.85 Nd 0.15 Fe 1−x Ni x O 3 thin films possess better combination properties at a leakage current density of 4.27 × 10 −9 A cm −2 , ferroelectric polarization of 28.58 μC cm −2 , saturation magnetization of 2.08 emu cm −3 and transmittance of over 85% when the Ni doping concentration, x is 0.05. Keywords. Bi 0.85 Nd 0.15 Fe 1−x Ni x O 3 ; Ni-doping; thin film; ferroelectric property; leakage current.

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“…Among them, perovskite-type compounds in the traditional ferroelectric film material occupies a large proportion. BiFeO 3 (BFO) is a typical perovskite-type structure, with the characteristics of ferroelectricity and ferromagnetic coexistence at room temperature (RT), which shows high Curie temperature (T C = 830°C) and high Neel temperature (T N = 370°C) [1,5,6]. In addition, BFO has a large remnant polarisation (P r ∼100 μC/cm 2 ) [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Perfection of leakage and ferroelectric properties of Ni‐doped BiFeO ₃ thin films

Wang

Yang

Zhang

et al. 2018

Micro & Nano Letters

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BiFe 1−x Ni x O 3 (x = 0%, 1, 2 and 3%) films were deposited on ITO/glass substrate using sol-gel process. The work reports the impacts of Ni doped on the crystal microstructure, leakage current, conduction mechanism and ferroelectric behaviour systematically. From the XRD analysis, all samples match well with the perovskite structure without impurity phase. Polarisation-electric filed hysteresis loop demonstrates that the optimal Ni-doped content of BiFeO 3 films is x = 2%, of which the remnant double polarisation (2P r) is 141.4 μC/cm 2 at the test electric field of 1067 kV/cm. Leakage current density curves show that Ni doping has a great contribution in reducing leakage. The value of leakage is 4.79 × 10 −7 A/cm 2 at tested electric field of 300 kV/cm. In addition, the leakage conduction mechanism transforms from the Ohmic conduction under the low electric field into the space charge limited conduction under high electric field. Ni doped does not cause significant change in the conduction mechanism.

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Influence of transition elements doping on structural, optical and magnetic properties of BiFeO3 films fabricated by magnetron sputtering

Cited by 38 publications

References 20 publications

Structure, optical and magnetic properties of Bi 1−x Eu x FeO 3 films fabricated by pulsed laser deposition

Structure, optical and magnetic properties of Bi 1−x Eu x FeO 3 films fabricated by pulsed laser deposition

Influence of Ni doping on the structural, ferroelectric, magnetic and optical properties of $$\hbox {Bi}_{0.85}\hbox {Nd}_{0.15}\hbox {Fe}_{1-x}\hbox {Ni}_{x}\hbox {O}_{3}$$ thin films

Perfection of leakage and ferroelectric properties of Ni‐doped BiFeO ₃ thin films

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Influence of transition elements doping on structural, optical and magnetic properties of BiFeO3 films fabricated by magnetron sputtering

Cited by 38 publications

References 20 publications

Structure, optical and magnetic properties of Bi 1−x Eu x FeO 3 films fabricated by pulsed laser deposition

Structure, optical and magnetic properties of Bi 1−x Eu x FeO 3 films fabricated by pulsed laser deposition

Influence of Ni doping on the structural, ferroelectric, magnetic and optical properties of $$\hbox {Bi}_{0.85}\hbox {Nd}_{0.15}\hbox {Fe}_{1-x}\hbox {Ni}_{x}\hbox {O}_{3}$$ thin films

Perfection of leakage and ferroelectric properties of Ni‐doped BiFeO 3 thin films

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Perfection of leakage and ferroelectric properties of Ni‐doped BiFeO ₃ thin films