2019
DOI: 10.1016/j.spmi.2019.01.032
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Influence of twin boundaries on the photocurrent decay of nanobranch and dense-forest structured SnO2 UV photodetectors

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Cited by 28 publications
(9 citation statements)
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“…It is significant that at the high voltage the dark current for undoped SnO 2 thin films engenders from space charge of excess carriers injected from one of the electrodes and the traps of materials also contribute to this behavior [58,59] . The SCLC phenomena is reported by Aldemir et al for photodiode based on Al-doped SnO 2 thin films prepared using spray pyrolysis [38] . However, sub-linearly variation (r = 0.64) at the voltage below 3.5 V varies to super linearly variation (r = 1.77) at the voltage above 3.5 V is recorded with the sample doped with 3 wt.% of aluminum, the flow of trap limited and space charge limited current inside the material is responsible for this type of variation [58,17] .…”
mentioning
confidence: 72%
See 1 more Smart Citation
“…It is significant that at the high voltage the dark current for undoped SnO 2 thin films engenders from space charge of excess carriers injected from one of the electrodes and the traps of materials also contribute to this behavior [58,59] . The SCLC phenomena is reported by Aldemir et al for photodiode based on Al-doped SnO 2 thin films prepared using spray pyrolysis [38] . However, sub-linearly variation (r = 0.64) at the voltage below 3.5 V varies to super linearly variation (r = 1.77) at the voltage above 3.5 V is recorded with the sample doped with 3 wt.% of aluminum, the flow of trap limited and space charge limited current inside the material is responsible for this type of variation [58,17] .…”
mentioning
confidence: 72%
“…Moreover, Al-doped SnO 2 thin films can be obtained easily using this technique, which makes them very attractive in many applications such as gas sensors [34] and solar cells [35] . The thin films photoconductivity properties based on pure and doped SnO 2 have been studied by a number of research such as Sb-doped SnO 2 [36] , As-doped SnO 2 [37] , Aldoped SnO 2 [38] , and the effect of twin boundaries on photocurrent decay of the pure SnO 2 [39] . However, the studies about the UV photoconductivity and photosensitivity in Al-doped SnO 2 thin films prepared by sol-gel dip coating are not enough.…”
Section: Introductionmentioning
confidence: 99%
“…With the increase of the concentration of nucleation centers and nucleation crystals involved in the reaction, the number of adsorbed atoms on the substrate surface increases, and the greater occupation of adsorbed atoms on the surface reduces the fluidity of the adsorbed atoms, thus reducing the diffusion rate. At this time, the deposition rate plays a leading role in the diffusion rate, which makes the nano-SnO 2 tend to grow into large clusters or dense branch structures, rather than smooth and flat nanosheet structures . Therefore, the appropriate addition of NH 3 ·H 2 O in the growth solution is more conducive to the synthesis of a flat surface and nonstacked nanosheet samples.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 1b shows the effect of the NH At this time, the deposition rate plays a leading role in the diffusion rate, which makes the nano-SnO 2 tend to grow into large clusters or dense branch structures, rather than smooth and flat nanosheet structures. 17 Therefore, the appropriate addition of NH 3 •H 2 O in the growth solution is more conducive to the synthesis of a flat surface and nonstacked nanosheet samples.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The enhancement process of UV photo detectors should involve response time, restoration time, responsivity, and detectivity [10][11][12]. For this purpose, numerous articles have tried to improve the performance of the detectors using metal oxide semiconductors such as ZnO, TiO 2 , NiO, SnO 2 , and WO 3 [13][14][15][16][17]. Among these materials, Nickel Oxide (NiO) is the preferred one, the reason behind the selection of this p-type metal oxide semiconductor is related to its direct and wide energy band gap, high surface area, high detectivity and responsivity, easy to fabricate, and low cost device [18][19][20].…”
Section: Introductionmentioning
confidence: 99%