Influences of Deposition Time on Tio2 Thin Films Properties Prepared by CVD Technique

Lias, Jais; Shahadan, Siti Aishah; Rahim, M. S.; Nayan, Nafarizal; Ahmad, Mohd Khairul; Sahdan, Mohd Zainizan

doi:10.11113/jt.v78.9754

Cited by 3 publications

(1 citation statement)

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“…The barrier heterogeneity can be attributed to the strong morphological roughness of the films. For example, it was shown in [32] that TiO 2 , films deposited on a glass substrate for 1 hour, the roughness reaches ∼ 90 nm at a grain size of ∼ 150 nm.…”

Section: Resultsmentioning

confidence: 99%

Features of the Band Structure and the Mechanism of Lateral Photoconductivity in Hybrid Structures T/SiO-=SUB=-2-=/SUB=-/Si(T=Fe,Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-, TiO-=SUB=-2-=/SUB=-)

Pisarenko

Коробцов

Dimitriev

et al. 2022

Physics of the Solid State

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This paper presents the results of studying the lateral photovoltaic effect in hybrid structures based on SiO2/Si depending on the nature of the conductivity of the material of the upper layer (Fe is a metal, Fe3O4 is a semimetal, TiO2 is a semi-insulator). It is shown that this effect is observed in hybrid structures in which a depleted region with a significant band bending is formed at the SiO2/Si interface. Theoretical calculations of the lateral photovoltage based on the energy parameters of the band diagrams showed that an increase in the sensitivity of the lateral photoelectric effect is associated with an increase in the built-in potential at the SiO2/Si interface. It has been established that the transient characteristics of the lateral photoelectric effect, such as the rise and fall times of the photovoltage signal, are determined by the configuration of the RC-filter in the near-contact region, which depends on the conductivity of the upper layer. It is shown that, in the case of the lateral photovoltaic effect, current transfer occurs along the inversion layer, and the upper layer serves to generate a quasi-p-n junction at the SiO2/Si interface. Keywords:lateral photovoltaic effect, hybrid structures, iron, magnetite, titanium dioxide.

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Section: Resultsmentioning

confidence: 99%

Features of the Band Structure and the Mechanism of Lateral Photoconductivity in Hybrid Structures T/SiO-=SUB=-2-=/SUB=-/Si(T=Fe,Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-, TiO-=SUB=-2-=/SUB=-)

Pisarenko

Коробцов

Dimitriev

et al. 2022

Physics of the Solid State

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Nanostructured TiO2 thin films sputtered at room temperature as electron transport layer for flexible perovskite solar cell applications: Impact of varying RF power

Baqandwan,

Mohamad Samsuri,

Halim

et al. 2024

Physica B: Condensed Matter

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The effect of deposition time on the properties of titanium dioxide thin film prepared using CVD

Lias

Fauzi

Sahdan

et al. 2020

IOP Conf. Ser.: Mater. Sci. Eng.

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This research aimed to investigate effect of deposition time on the structural, morphological properties and optical properties of the titanium dioxide (TiO2) thin film prepared using Chemical Vapour Deposition (CVD). This research involved two processes which are samples preparation process and characterisation process to fulfil the aim. The samples preparation process was done by synthesising TiO2 on indium thin oxide (ITO) substrates heated at 60 °C substrate temperature. Titanium butoxide used as the precursor for this chemical reaction was volatilised at 210 °C. Oxygen gas was flown at 1 litre per minute as the carrier gas. In order to study the effect of deposition time, the synthesise of the thin films were varied to 15, 30, 45 and 60 minutes. After synthesising process, the samples underwent thermal treatment via annealing process for 1 hour at 500 °C. For the characterisation process, Raman Spectroscopy technique was employed to investigate the structural properties of the samples. Apart from that, Field Emission Microscopy (FEM) technique, which was performed via FE-SEM, was employed to investigate the morphologies of the samples. Other than that, UV-Vis spectrometry was employed to analyse the optical properties of the samples. Analysis of data from Raman spectroscopy displayed four Raman Shifts for each sample which confirms that the samples exhibit TiO2 of anatase phases. Whereas, images from FE-SEM displayed reduction of nanoparticle clusters on the samples as the rate of deposition time increases. Meanwhile, UV-Vis analysis displayed transmittance of the samples ranging between 50% to 80% transmittance and each sample exhibits the same optical band gap at 3.25 eV.

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Influences of Deposition Time on Tio2 Thin Films Properties Prepared by CVD Technique

Cited by 3 publications

References 0 publications

Features of the Band Structure and the Mechanism of Lateral Photoconductivity in Hybrid Structures T/SiO-=SUB=-2-=/SUB=-/Si(T=Fe,Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-, TiO-=SUB=-2-=/SUB=-)

Features of the Band Structure and the Mechanism of Lateral Photoconductivity in Hybrid Structures T/SiO-=SUB=-2-=/SUB=-/Si(T=Fe,Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-, TiO-=SUB=-2-=/SUB=-)

Nanostructured TiO2 thin films sputtered at room temperature as electron transport layer for flexible perovskite solar cell applications: Impact of varying RF power

The effect of deposition time on the properties of titanium dioxide thin film prepared using CVD

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