Influences of Processing Chemistry of Silicon Nitride Films on the Charge Trapping Behavior of Oxide/CVD‐Nitride/Oxide Capacitors

Nguyen, Bich‐Yen; Tobin, P.J.; Teng, Ker-Wen; Tompkins, Harland G.; Chang, Kow–Ming

doi:10.1149/1.2095747

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…As mentioned earlier, the opposite appears at low field where the cathode oxide limits the current flow (23). The case of the 6 nm thick nitride can be understood if oxidation of the underlying polysilicon electrode by oxygen diffusion through the nitride occurs (24). In this case, an oxide layer thicker than the top film will be formed at the Si/nitride interface.…”

Section: Discussionmentioning

confidence: 92%

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

Fazan

Ditali

Dennison

et al. 1991

J. Electrochem. Soc.

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The reliability and electrical properties of planar and 3D interpoly oxide/nitride films stacked on multi-megabit dynamic random access memory (DRAM) array topography are reported to determine their thinning and capacitance limits. A compromise between reliability, leakage current, and storage capacity is proposed for oxidized low-pressure chemical vapor deposited nitride layers with different nitride thicknesses, oxidation conditions, and top/bottom polysilicon doping levels. Capacitance, leakage current, and time-dependent dielectric breakdown measurements show that thinner nitride layers with longer oxidation times provide the maximum lifetime and capacitance. However, the nitride thinning is limited when leakage current by Poole-Frenkel or Fowler-Nordheim emission occurs. For 5 V operated high-density DRAMs, nitride layers as thin as 7 nm, giving a capacitance of 6 fF/~m 2 present the optimum conditions. For 3.3 V operations, films as thin as 4-5 nm, giving a capacitance of 9 fF/~m 2, can be expected.

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Section: Discussionmentioning

confidence: 92%

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

Fazan

Ditali

Dennison

et al. 1991

J. Electrochem. Soc.

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“…The performance of MNOS devices relies on the preparation of the silicon nitride film. Deposition and postdeposition annealing conditions are critical (7). The amount of oxygen in the silicon nitride film has been correlated with changes in the optical index of refraction, dielectric constant, bandgap, and photoionization cross section associated with deep electron traps (8,9).…”

mentioning

confidence: 99%

The Combined Effect of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices

Kapoor

Bailey

et al. 1992

J. Electrochem. Soc.

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The combined effect of varying the hydrogen and oxygen impurities in the silicon nitride film of metal‐nitride‐oxide‐semiconductor (MNOS) devices was studied to develop a correlation among the chemical composition, current conduction, charge trapping, and memory properties of the devices. The atomic percentage of hydrogen increased in the film as a function of decreasing deposition temperature from 850 to 650°C. Oxygen was incorporated into the film by replacing nitrogen atoms through the use of nitrous oxide gas during the film deposition process. The addition of oxygen further reduced the hydrogen concentration in the film. The trapped electron and hole densities decreased by 25 and 66%, respectively, with a corresponding decrease in film conductivity as hydrogen and oxygen concentration in the silicon nitride film increased by 4 and 12%, respectiyely. The incorporation of hydrogen and oxygen improved the overall average device retention and endurance characteristics by 40% and from 107 to 108 cycles, respectively. The hydrogen and oxygen impurities may passivate the silicon dangling bonds associated with shallow traps within the bandgap of silicon nitride and, thus, allow the carriers to become trapped in deep traps, yielding enhanced memory properties in the MNOS devices.

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Investigation of charge‐trapping centers in low‐pressure chemical vapor deposition Si₃N₄ thin films

Minami

Kamigaki

1995

Electron Comm Jpn Pt II

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Defects in Si3N4 films formed by low‐pressure chemical vapor deposition (LPCVD) were investigated by election spin resonance measurement. At room temperature, no electron spin resonance signal was observed in as‐deposited films. When the films were illuminated by ultraviolet ray (UV), signals of dangling bonds of Si (Si‐DB, N3  Si) are detected, where the g‐values were 2.0028 and the half‐value width was 14 G. This means there are N vacancies of weak Si: Si bonds (N3  Si : Si  N3) and/or dipolar‐type defects (N3  Si : Si  N3) caused by redistribution of electrons in N vacancies which cause pairs of defects (N3  Si:−, +Si  N3) by UV illumination. It is proposed that these vacancies can become dipolar‐amphoteric charge‐trapping centers of electrons and holes. The trap density and the charge‐trapping behaviors were investigated by evaluating the characteristics of MNOS nonvolatile memory devices with Si3N4 gate dielectrics.

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Influences of Processing Chemistry of Silicon Nitride Films on the Charge Trapping Behavior of Oxide/CVD‐Nitride/Oxide Capacitors

Abstract: not Available.

Cited by 7 publications

References 5 publications

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

The Combined Effect of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices

Investigation of charge‐trapping centers in low‐pressure chemical vapor deposition Si₃N₄ thin films

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Influences of Processing Chemistry of Silicon Nitride Films on the Charge Trapping Behavior of Oxide/CVD‐Nitride/Oxide Capacitors

Abstract: not Available.

Cited by 7 publications

References 5 publications

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

The Combined Effect of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices

Investigation of charge‐trapping centers in low‐pressure chemical vapor deposition Si3N4 thin films

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Product

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Investigation of charge‐trapping centers in low‐pressure chemical vapor deposition Si₃N₄ thin films