Infrared absorption spectroscopy study of phase formation in SiC layers synthesized by carbon implantation into silicon with a metal vapor vacuum arc ion source

The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

“…In the temperature range 20−1400°C, the value of the peak area for SiC 1.4 partial decay of the clusters at 1300°C, the estimations of the proportion of carbon atoms included in the optically inactive clusters suggest even higher values. In general, the assertions do not contradict the data (Chen et al, 2003;Wong et al, 1998;Chen et al, 1999), where the growths of area of Si−C-peak after annealing, were shown. We evaluated the linearity of the dependence of the area and number of optically active Si−C-bonds on the carbon concentration, basing on data of the peak area (Table 4).…”

“…We assume that the total area of the SiC-peak of IR transmission is the area of region between the curve of the IR spectrum and the baseline |Т 1 Т 2 | (Fig. 16a), and it is equal to the total absorption of infrared radiation at all frequencies and is roughly proportional to the number of all types of absorbing Si−C-bonds (Wong et al, 1998;Chen et al, 1999). Peak area was determined from the spectra of IR transmission (Figs.…”

“…The total number of SiC (optically active Si−C-bonds) in the SiC х layers after annealing at 1300ºC increases with the fractional degree of carbon concentration (х/0.03) y , where y ~ 0.37±0.09 (Table 5). In (Wong et al, 1998) at a fixed energy the total number of formed SiC increases with the fractional degree of doses, namely, D y witg «y» defined as 0.41. In this paper, SiC layers were synthesized using the ion source MEVVA implantation in p-Si of carbon ions with energies in the range 30−60 keV and doses ranged within (0.3-1.6)×10 18 с -2 .…”

“…From the position of the IR absorption band (700-725 cm -1 ), reducing its half-width after annealing and displacement in the region at 800 cm -1 , corresponding to transverse optical phonons of SiC, it was found that the formation of crystalline SiC phase occurs in the temperature range near 850ºC (Borders et al, 1971) and 900°C (Baranova et al, 1971). Silicon carbide was identified using transverse optical phonon spectra in most of the above work on ion implantation, as well as in (Gerasimenko et al, 1974, Wong et al, 1998, Akimchenko et al, 1977aChen et al, 1999, Kimura et al, 1981. The detection of longitudinal optical vibrations of lattice atoms (LO phonons) and their changes during film annealing give additional information on the crystallization processes (Akimchenko et al, 1977b(Akimchenko et al, , 1979.…”

“…This implies that the appearance of SiC crystallites in the layer is recorded when the formation of tetrahedral bonds (peak narrowing) is substantially complete (110 cm -1 ). Assumptions about the relationship between the size of SiC crystallites and half-width of the peak were also expressed in (Wong et al, 1998;Chen et al, 1999 For a layer SiC 0.12 , a sharp narrowing of the peak from 240 to 100 cm -1 (Fig. 27, curve 5) in the range 800−1100°C is shown, and then is not substantially reduced, demonstrating the formation of polycrystalline SiC phase at this temperature.…”