Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

Alt, H. Ch.; Egorov, A. Yu.; Riechert, H.; Wiedemann, B.; Meyer, J.D.; Michelmann, R.W.; Bethge, Κ.

doi:10.1063/1.1328096

Cited by 51 publications

(21 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[11][12][13][14][15][16][17][18][19][20] Evidence for three different a Ќ ͑x͒ dependences can be found in the literature. Some authors have observed a linear behavior for x up to 0.05, 11 or even up to 0.10, 12 with a constant strain coefficient of ␣ V = −0.39.…”

Section: Discussionmentioning

confidence: 99%

“…Other studies have shown deviations from the linear dependence predicted by Vegard's rule above a certain critical N concentration, 0.01Ͻ x c Ͻ 0.03. Two types of deviations have been observed: negative 13,14 ͑␣ Ͻ ␣ V for x Ͼ x c ͒ with a minimum strain coefficient of −0.52; and positive [15][16][17][18][19][20] ͑␣ Ͼ ␣ V for x Ͼ x c ͒ with maximum strain coefficients between −0.3 and −0.2.…”

Section: Discussionmentioning

confidence: 99%

“…12 Recently, however, we have witnessed a significant accumulation of experimental data showing deviations from the linear dependence pre-dicted by Vegard's rule above a certain "critical" N concentration 0.01ഛ x c ഛ 0.03. The observed decrease of the lattice constant with increasing N content can be faster 13,14 ͑negative deviation͒ or slower [15][16][17][18][19][20] ͑positive deviation͒ than predicted by Vegard's rule for x Ͼ x c . These contrasting results are probably due to the fact that with increasing N concentration, different mechanisms of N incorporation develop for different fabrication techniques and growth conditions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nitrogen incorporation and lattice constant of strained diluteGaAs1−xNxlayers on GaAs (001): Anab initiostudy

et al. 2006

View full text Add to dashboard Cite

Various nitrogen-related defects in GaAs 1−x N x are studied within the framework of the density-functional theory using a plane-wave pseudopotential method. We use a biaxially strained periodic 64-atom supercell corresponding to coherent growth on a GaAs ͑001͒ substrate, containing up to four N atoms. The ͑001͒ lattice constants a Ќ , strain coefficients ␣, and formation energies of the following configurations are calculated: substitutional N As , N interstitials, N clusters on one As site, and N clusters on two nearest-neighbor Ga-As sites. We analyze the available experimental evidence for deviations from the linear decrease of the lattice constant with increasing N concentration ͑Vegard's rule͒. Our results suggest that negative deviations ͑faster than linear decrease͒ can be due to substitutional N and to vacancy-containing defect complexes stabilized by hydrogen. Positive deviations ͑slower than linear decrease͒ are attributed to N interstitials and clusters.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nitrogen incorporation and lattice constant of strained diluteGaAs1−xNxlayers on GaAs (001): Anab initiostudy

et al. 2006

View full text Add to dashboard Cite

show abstract

“…8 The issue of local bonding of nitrogen in these dilute alloys has so far been addressed for GaAsN and GaInAsN. Both infrared absorption 9 and Raman spectroscopy 10-12 revealed a vibrational mode near 470 cm Ϫ1 in dilute GaAsN, which is assigned to the vibration of nitrogen bonded to four Ga neighbors. 9 For GaInAsN, the same experimental techniques gave evidence for the presence of additional modes at slightly lower and higher frequency, which gain in strength upon, or even appear only after postgrowth thermal annealing.…”

Section: Preferential Formation Of Alan Bonds In Low N-content Algaasnmentioning

confidence: 99%

Preferential formation of Al–N bonds in low N-content AlGaAsN

Geppert

Wagner

Köhler

et al. 2002

Applied Physics Letters

View full text Add to dashboard Cite

The bonding of nitrogen in low N-content AlxGa1−xAs1−yNy with x⩽0.05 and y⩽0.04 has been studied by Raman spectroscopy. Upon the addition of Al to GaAsN, additional vibrational modes are observed at around 450 cm−1, which is below the GaN-like longitudinal optical (LO) phonon mode centered at 470 cm−1. These modes are attributed to the formation of Al and N containing complexes with Al-to-N bonding. With increasing Al content the Al–N related modes gain intensity at the expense of the GaN-like mode, and they become the dominant N-related feature for an Al-content of 5% at a fixed N content of 1%. On the other hand, increasing the N content from 0% up to 4% at a constant Al concentration of 5% results first in the appearance and eventual saturation in intensity of the AlN-like modes, accompanied by a steep increase in intensity and eventual dominance of the GaN-like vibrational mode. Simultaneously the AlAs-like LO2 phonon mode shows a drastic decrease in intensity for N contents exceeding 2%. All these observations strongly indicate that there is a preferential formation of Al–N bonds in low N- and Al-content AlGaAsN, which is in direct contrast to GaInAsN, where even after thermal annealing the GaN-like mode remains dominant in the Raman spectrum compared to the InN-like modes.

show abstract

“…We find that the mode weight on the N atom is 94.6%, and the mode weight on the surrounding Ga atoms is 5.1%, meaning that the weight on the rest of the surrounding atoms is negligible. Single N substitution on an As site in GaAs results in a LVM at [57], which has been modeled accurately, resulting in a LVM frequency of 465 cm −1 [63,66], using a similar theoretical approach to the one we employ in the present work. Substitution of As by C in GaAs has been experimentally determined to result in a LVM at 582 cm −1 [113], which decreases by 42 cm −1 to 540 cm −1 for the case of C in GaSb [114].…”

Section: Localized Vibrational Modesmentioning

confidence: 99%

N incorporation and associated localized vibrational modes in GaSb

et al. 2014

View full text Add to dashboard Cite

We present results of electronic structure calculations on the N-related localized vibrational modes in the dilute nitride alloy GaSb 1−x N x . By calculating the formation energies of various possible N incorporation modes in the alloy, we determine the most favorable N configurations, and we calculate their vibrational mode frequencies using density functional theory under the generalized gradient approximation to electron exchange and correlation, including the effects of the relativistic spin-orbit interactions. For a single N impurity, we find substitution on an Sb site, N Sb , to be most favorable, and for a two-N-atom complex, we find the N-N split interstitial on an Sb site to be most favorable. For these defects, as well as, for comparison, defects comprising two N atoms on neighboring Sb sites and a N-Sb split interstitial on an Sb site, we find well-localized vibration modes (LVMs), which should be experimentally observable. The frequency of the triply degenerate LVM associated with N Sb is determined to be 427.6 cm −1 . Our results serve as a guide to future experimental studies to elucidate the incorporation of small concentrations of N in GaSb, which is known to lead to a reduction of the band gap and opens the possibility of using the material for long-wavelength applications.

show abstract

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

Cited by 51 publications

References 15 publications

Nitrogen incorporation and lattice constant of strained diluteGaAs1−xNxlayers on GaAs (001): Anab initiostudy

Nitrogen incorporation and lattice constant of strained diluteGaAs1−xNxlayers on GaAs (001): Anab initiostudy

Preferential formation of Al–N bonds in low N-content AlGaAsN

N incorporation and associated localized vibrational modes in GaSb

Contact Info

Product

Resources

About