Infrared focal plane array incorporating silicon IC process compatible bolometer

Tanaka, A.; Matsumoto, S.; Tsukamoto, Nanao; Itoh, S.; Chiba, K.; Endoh, Tsutomu; Nakazato, Akihiro; Okuyama, Kuniyuki; Kumazawa, Y.; Hijikawa, M.; Gotoh, Hideki; Танака, Тадатсугу; Teranishi, Nobukazu

doi:10.1109/16.543017

Cited by 135 publications

(52 citation statements)

References 8 publications

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“…Growing microstructures of foreign materials on top of silicon results in processing complexities that can compromise CMOS compatibility 18,19 . Furthermore, integration of thermally absorbing materials can be effective for short-wavelength infrared response but results in slow pixel response times intrinsically limited by the thermal time constant, which hinders applications in array-based real-time imaging systems at room temperature 10 .…”

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confidence: 99%

“…Siliconbased detectors satisfy the low-cost and on-chip complementary metal-oxide semiconductor (CMOS) compatibility criteria, but their infrared photoresponse is fundamentally limited by the 1.12-eV band gap (l ¼ 1,110 nm). Previous attempts to extend the photoresponse of silicon-based devices into the short-wavelength infrared regime (l ¼ 1,400-3,000 nm) at room temperature focused on forming heterostructures with SiGe alloys [6][7][8] or microstructures of thermally absorbing material 9,10 , and modifying the intrinsic band structure via intentional introduction of defects [11][12][13][14][15][16][17] . Growing microstructures of foreign materials on top of silicon results in processing complexities that can compromise CMOS compatibility 18,19 .…”

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confidence: 99%

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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

et al. 2014

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Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature. Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes. A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 10 20 cm À 3 into a single-crystal surface layer B150 nm thin. We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration. This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature.

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confidence: 99%

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confidence: 99%

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

et al. 2014

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“…Materials that can be processed at CMOS-compatible temperatures include metals and amorphous silicon. However, even though the use of these materials as MEMS structural materials has been demonstrated [31][32][33][34][35][36], they are not ideal candidates due to the performance and reliability problems they might cause. For example, certain metals, like Al, exhibit a tendency to creep, which might result in reliability problems and degraded performance in devices such as pressure sensors or RF switches [37].…”

Section: Cmos-mems Integration: Why How and What?mentioning

confidence: 96%

Introduction

Ruiz

Meyer

Witvrouw

2013

Poly-SiGe for MEMS-above-CMOS Sensors

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“…The Laboratoire InfraRouge (LIR) of the Laboratoire dÕElectronique et des Technologies de lÕInformation (LETI) [2] and Raytheon [3] reported the use of doped amorphous Si:H for the same purpose. Metals were investigated for the same application by NEC [4]. Many workers investigated polycrystalline semiconductors, including poly SiGe [5] and polysilicon [6].…”

Section: Introductionmentioning

confidence: 99%