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This paper discusses the design and performance of a 256 X 256 bolometer-type uncooled infrared detector. First, model calculations are carried out to clarify the relations of the noise equivalent temperature difference (NETD) to the electrical properties ofthe bolometer material. The properties are mainly resistivity , the temperature coefficient ofresistance (TCR) and 1/fnoise. To obtain real-time images with NETD values smaller than 0.15 K for F/i optics, vanadium oxide thin film was developed as the bolometer material, having a sheet resistance range of 5-50kQ /square and a TCR value of -2%/K. This material did not exhibit thermochromism like V02(A), because it was identified as V02(B). The bolometer-array was statistically evaluated and put into the infrared camera. Finally, a thermal image with an NETD of 0.15 K was obtained.

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A 128 X 128 element thermopile infrared image sensor has been developed. This device has a monolithically integrated structure to increase fill factor. The CCD for signal charge accumulation and signal charge read-out is fabricated on the silicon surface. Over the CCD, silicon dioxide diaphragms for thermal isolation are made by using micromachining technology. On each diaphragm, 32 pairs of p-type polysilicon and n-type polysilicon thermopile are formed. The noise equivalent temperature difference obtained, by the device, is 0.5°C with an f/i lens. Since the materials used are the same as those for silicon IC 's, and since the whole fabrication process is earned out at the silicon IC plant, it can be said that a low cost uncooled infrared image sensor is realized by this technology.

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