Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

Schöche, S.; Hofmann, Tino; Darakchieva, Vanya; Sédrine, N. Ben; Wang, Xinqiang; Yoshikawa, Akihiko; Schubert, M.

doi:10.1063/1.4772625

Cited by 29 publications

(46 citation statements)

References 40 publications

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“…Very recently, we have reported the application of infrared spectroscopic ellipsometry (IRSE) and optical Hall effect to evidence p-type conductivity in InN:Mg films and determine the free carrier parameters. 29 All methods have consistently shown that InN doped with Mg concentration below 1.0 Â 10 18 cm À3 still shows n-type conductivity. 22,23,29 This was explained as a result of the insufficient concentration of ionized Mg acceptors to overcome the residual background n-type doping.…”

Section: Introductionmentioning

confidence: 97%

“…29 All methods have consistently shown that InN doped with Mg concentration below 1.0 Â 10 18 cm À3 still shows n-type conductivity. 22,23,29 This was explained as a result of the insufficient concentration of ionized Mg acceptors to overcome the residual background n-type doping. For Mg concentrations in the range between 1.0 Â 10 18 cm À3 and 2.9 Â 10 19 cm À3 p-type doped InN is achieved with free hole concentrations in the low 10 18 cm À3 range.…”

Section: Introductionmentioning

confidence: 97%

“…Both electrolyte capacitance voltage (ECV) measurements and IRSE demonstrated that p-type conductivity in the samples from set A was achieved for Mg concentrations between 1.0 Â 10 18 cm À3 and 2.9 Â 10 19 cm À3 . 29,33 The presence of free holes in samples B3, B4, and B5 was proved by negatively shifted ECV and positive Seebeck coefficients in thermopower measurements. 23 IRSE was performed at multiple angles of incidence using a variable angle J.…”

Section: Experimental and Data Analysismentioning

confidence: 99%

“…For Mg concentrations in the range between 1.0 Â 10 18 cm À3 and 2.9 Â 10 19 cm À3 p-type doped InN is achieved with free hole concentrations in the low 10 18 cm À3 range. 22,23,29 If the Mg concentration is further increased, the conductivity in InN switches again to n-type possibly due to donor defects induced by the Mg incorporation. 22,23,29 The range of Mg concentrations of the p-type window in InN may vary depending on the growth conditions which determine the microstructure and impurity/dopant incorporation in the films.…”

Section: Introductionmentioning

confidence: 99%

“…22,23,29 If the Mg concentration is further increased, the conductivity in InN switches again to n-type possibly due to donor defects induced by the Mg incorporation. 22,23,29 The range of Mg concentrations of the p-type window in InN may vary depending on the growth conditions which determine the microstructure and impurity/dopant incorporation in the films. 22,23 Establishing the effect of Mg incorporation on the structural properties and their interrelation with free-charge carrier (FCC) parameters is thus very important in order to better understand and optimize p-type doping in InN.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Mg doping on the structural and free-charge carrier properties of InN films

Xie¹,

Sédrine²,

Schöche³

et al. 2014

Journal of Applied Physics

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We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 Â 10 18 cm À3 to 3.9 Â 10 21 cm À3 . The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 Â 10 18 cm À3 Շ [Mg] Շ 9.0 Â 10 19 cm À3 . The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed. V C 2014 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 97%

Section: Experimental and Data Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Effect of Mg doping on the structural and free-charge carrier properties of InN films

Xie¹,

Sédrine²,

Schöche³

et al. 2014

Journal of Applied Physics

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Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Shkerdin

Rabbaa

Stiens

et al. 2014

Phys. Status Solidi B

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The model to calculate the free‐carrier absorption coefficient for polar III–V semiconductors with strong LO phonon–plasmon interaction was generalized by taking into account free‐carrier scattering by defects The following main mechanisms assisting in the photon absorption process, where taken into account: thermal phonon‐like branch and plasmon‐like branch scattering, impurity scattering, and acoustic phonon scattering. To calculate the contributions of phonon–plasmon coupled modes into the absorption coefficient, the integral dispersion equation for coupled mode frequencies was obtained taking into account free electron scattering by imperfections (mainly by charged impurities in highly doped semiconductors); the dispersion relation of phonon–plasmon coupled modes were calculated versus electron concentration. Computations are performed for α‐GaN and GaN doped semiconductors at different mid‐IR wavelengths and electron concentrations. For all considered cases, the relative difference between the Drude model calculation results based on static and dynamic damping factors is typically smaller than (25–35)%.

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Extending group‐III nitrides to the infrared: Recent advances in InN

Zhao

2015

Physica Status Solidi (b)

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In this article, we provide an overview on the recent advances made in InN, including both planar and nanowire structures. With the improved epitaxial growth process, the background electron concentration can be reduced to low 1017 and 1013 cm−3 ranges in planar and nanowire structures, respectively, with the latter approaching the intrinsic limit of InN at room temperature. Extensive studies have shown that the measurement of p‐type conduction in InN epilayers has been fundamentally limited by the presence of electron accumulation on the c‐plane surfaces. In contrast, the nonpolar grown surfaces of InN are found to be completely free of electron accumulation. Moreover, through direct Mg dopant incorporation, the surfaces (nonpolar m‐plane) of InN nanowires can be transformed from intrinsic to nearly p‐type degenerate, which has led to the first direct measurement of p‐type conduction in InN.

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Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

Cited by 29 publications

References 40 publications

Effect of Mg doping on the structural and free-charge carrier properties of InN films

Effect of Mg doping on the structural and free-charge carrier properties of InN films

Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Extending group‐III nitrides to the infrared: Recent advances in InN

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