1996
DOI: 10.1007/bf00943621
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InGaAsP/InP 1.55-?m lasers with chemically assisted ion beam-etched facets

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Cited by 6 publications
(3 citation statements)
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“…The high-magnification transmission electron microscopy (TEM) image in Figure c reveals the cross-sectional geometry and compositional structure of a NW. Regarding the cross section, a slight sidewall slope arising from the mechanical etching process led to the formation of the trapezoidal cross-sectional shape . Therefore, one can readily identify the cross-sectional orientation based on the shape and determine the electrical polarity of the NW as well.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The high-magnification transmission electron microscopy (TEM) image in Figure c reveals the cross-sectional geometry and compositional structure of a NW. Regarding the cross section, a slight sidewall slope arising from the mechanical etching process led to the formation of the trapezoidal cross-sectional shape . Therefore, one can readily identify the cross-sectional orientation based on the shape and determine the electrical polarity of the NW as well.…”
Section: Resultsmentioning
confidence: 99%
“…Regarding the cross section, a slight sidewall slope arising from the mechanical etching process led to the formation of the trapezoidal crosssectional shape. 47 Therefore, one can readily identify the crosssectional orientation based on the shape and determine the electrical polarity of the NW as well. In addition, the sidewall slope provides a better topological condition when the top graphene contact is conformally applied to the top surface of the NW.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…For example, for InP semiconductor compound etching, the etching selectivity of poly͑methyl methacrylate͒ ͑PMMA͒ is as low as 2-5. 5 In addition, PMMA could not resist high temperatures over 200°C, which is required by chlorine-based InP dry etching to remove the by-product during the etching process. Hence, SiO 2 or SiN 4 are typically used as intermediate masks for indirect pattern transfer.…”
mentioning
confidence: 99%