InGaAsP/InP horizontal cavity surface-emitting lasers radiating in two opposite directions

Abstract

A 1.3 μm InGaAsP/InP surface-emitting laser of a new design is demonstrated. It consists of internal and external 45° micromirrors and emits beams from both the front and rear surfaces. The device has a buried crescent laser structure with reflection mirrors etched at vertical and 45° to the plane of the active layer. The mirror facets are fabricated using one reactive ion-beam etching process. A threshold current of 80 mA, and each output power above 0.2 mW are achieved at room temperature.

Properties of InGaAs/GaAs QW coupled edge and surface emitting tilted cavity lasers

“…Etching is not dependent on the crystallographic plane of the semiconductor wafer, so devices can be optimally located. This design advantage also makes it possible to fabricate structures that eliminates the requirement for mechanical cleaving of facets, an inexact process that can degrade laser performance and decrease yield [3,4]. Coupled cavity semiconductor diode lasers, with their ability to control the wavelength emission spectrum, are versatile candidates as light sources for future wavelength domain multiplexing optoelectronics systems.…”