InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

Abstract

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photoluminescence intensity of InGaN. Record electron mobilities from 1070 to 1290 cm 2 /VÁs with associated sheet charge density of $2 Â 10 13 cm À2 were obtained across the In x Ga 1-x N channel composition range x ¼ 0.05 to 0.10. V

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

“…The values of Schottky barrier height (f b ) and the ideality factor (h) for the junction were calculated by fitting a line in the linear region of the forward J-V curves using thermionic emission (TE) model. From the TE theory, where qV > 3kT, the relation between current density and applied bias voltage for the Schottky junction is given by [19][20][21] J ¼ J s exp qV hkT (2) where,…”

“…InGaN-based materials have received considerable attention due to their potential applications in light emitting diodes (LEDs), high electron mobility transistor (HEMTs), laser diodes and detectors [1][2][3][4][5]. The extensive utilization of InGaN as an active layer in these high performance devices is due to its tunability nature of the energy band gap which allows tuning of the band gap and emission wavelength from visible to near ultraviolet region.…”

Development of an electrically controlled terahertz-wave modulator

“…To fabricate the HEMT/SRR-based composite THz modulator, at first a standard GaAs-based HEMT process technology was employed to make the HEMTs [3,[20][21][22]. The HEMT epi-structure, shown in Figure 1 (b), was grown by molecular beam epitaxy (MBE) on a 4 inch 635 μm-thick semi-insulating (SI) GaAs (100) substrate, consisting of a 20 nm-thick GaAs buffer layer, an n-AlGaAs (20 nm)/InGaAs (7 nm)/n-AlGaAs (20 nm) double hetero-structure sandwiched in between a 20-pair 2.0 nm/1.5 nm AlGaAs/GaAs superlattice and a 2 nm-thick GaAs layer, which were followed by a 1.5-nm-thick AlAs layer, and finished with a 50 nm n-GaAs cap layer.…”

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

“…Indium gallium nitride (InGaN), a ternary compound of III-nitride semiconductors, has received considerable attention due to its potential applications in optoelectronic devices [48][49][50][51]. The choice of InGaN as an active layer in high-performance optoelectronic devices is due to the advantage one gets in tuning the energy bandgap from visible to near-ultraviolet region by changing the In composition.…”