In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R ON,SP (5.12 m · cm 2 ), a low turn-ON voltage (< 0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figureof-merit BV 2 /R ON,SP of 727 MW · cm −2 . The record high BV of 1.9 kV is attributed to the dual field-plate structure.Index Terms-Schottky barrier diode, GaN on silicon, breakdown voltage, high voltage device, AlGaN/GaN, field plate. Manuscript

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Bare Au gated and thioglycolic acid functionalized Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect mercury (II) ions. Fast detection of less than 5s was achieved for thioglycolic acid functionalized sensors. This is the shortest response time ever reported for mercury detection. Thioglycolic acid functionalized Au-gated AlGaN∕GaN HEMT based sensors showed 2.5 times larger response than bare Au-gated based sensors. The sensors were able to detect mercury (II) ion concentration as low as 10−7M. The sensors showed an excellent sensing selectivity of more than 100 for detecting mercury ions over sodium or magnesium ions. The dimensions of the active area of the sensor and the entire sensor chip are 50×50μm2 and 1×5mm2, respectively. Therefore, portable, fast response, and wireless based heavy metal ion detectors can be realized with AlGaN∕GaN HEMT based sensors.

Some aspects of current flow in large Josephson junctions are discussed within the approximation of a linear current-phase relationship. The behavior of various geometrical junction configurations, widely employed in practice, has been investigated.