InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers

Huang, Zheng-Da; Weng, W. Y.; Chang, Shoou–Jinn; Hua, Yuan-Fu; Chiu, Chiu-Jung; Hsueh, Ting-Jen; Wu, San-Lein

doi:10.1109/jsen.2012.2230113

Cited by 17 publications

(5 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, Ga 2 O 3 has been used as electroluminescent devices, 2) Schottky barrier devices, 3) field-effect transistors, 4) heterojunction UV detectors, 5) high-temperature gas (O 2 , H 2 , CO, CH 4 , etc.) sensors, 6) humidity sensors, 7) solar-blind photodetectors, 8) capping/passivation coatings, 9) transparent conducting oxides, 10) and photocatalysis. 11) Various Ga 2 O 3 polymorphs, including , , and phases, have been synthesized and extensively studied.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescent Properties of Eu³⁺in Ga₂O₃:Cr³⁺Films Prepared by Metal Organic Deposition

Tokida

Adachi

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We demonstrate the synthesis of β-Ga2O3:Eu3+ red-emitting films by metal–organic deposition and report the photoluminescence (PL) properties of such films measured from 20 to 450 K. β-Ga2O3 is one of five well-known modifications of gallium oxide. The X-ray diffraction analysis indicates that only β-phase Ga2O3 can be synthesized by calcination at T c≥800 °C. An activation energy of ∼0.65 eV for the Eu3+ ions in β-Ga2O3 is determined from a plot of Eu3+-related red emission intensity vs calcination temperature. Lattice temperature dependences of the PL spectrum and luminescence decay time were performed at T = 20–450 and 20–300 K, respectively. No strong temperature dependences of the red emission intensity and decay time were observed below 300 K; however, the PL intensity at T > 300 K exhibited a gradual decrease with increasing T, yielding a quenching energy of ∼0.5 eV. The films calcined at T c≥900 °C revealed a deep-red emission band peaking at ∼1.7 eV, together with two sharp red emission peaks at ∼1.78 and ∼1.80 eV. These emission band and peaks were attributed to the Cr3+ ions unintentionally doped in β-Ga2O3.

show abstract

Section: Introductionmentioning

confidence: 99%

Photoluminescent Properties of Eu³⁺in Ga₂O₃:Cr³⁺Films Prepared by Metal Organic Deposition

Tokida

Adachi

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Using the data shown in Fig. 5 we can determine the NEP of our photodetector by using the equation [28]…”

Section: Resultsmentioning

confidence: 99%

An Amorphous (Al_0.12Ga_0.88)₂O₃ Deep Ultraviolet Photodetector

2020

Self Cite

View full text Add to dashboard Cite

The authors report the deposition of an (AlxGa1-x)2O3 amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al0.12Ga0.88)2O3 photodetector, with a cutoff wavelength at 230 nm, was also fabricated. With-10 V applied bias, it was found the dark leakage current and the linear dynamic range (LDR) of the fabricated photodetector were about 1.23×10-9 A and 59.51 dB, respectively. With the same-10 V applied bias, the UVC/UVA contrast ratio was larger than 20. With λillumination = 230 nm and-5 V applied bias, it was found noise equivalent power (NEP) and detectivity (D*) of the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector were 9.94×10-11 W and 2.11×10 10 cmHz 1/2 W-1 , respectively. These results suggest the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector herein indicate a cost-effective solution for developing DUV photodetector applications.

show abstract

“…III-nitride material has a suitable large bandgap energy, high quantum efficiency and high electron mobility. Many types of AlGaInN-based photodetectors (PDs) have been fabricated and tested [3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28]. Schottky barrier PDs have been commercialized by several companies, and the typical responsivities of this type of PD are 0.18, 0.13, and 0.06 A/W at 350, 300, and 254 nm, respectively [3].…”

Section: Introductionmentioning

confidence: 99%

An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes

Chiu

Yeh

Wang

et al. 2019

Sensors

View full text Add to dashboard Cite

The monolithic integration of an ultraviolet (UV) sensor and warning lamp would reduce the cost, volume, and footprint, in comparison to a hybrid combination of discrete components. We constructed a module comprising a monolithic sensor indicator device based on basic p–i–n (PIN) photodiodes and a transimpedance amplifier. GaN-based light-emitting diodes (LEDs) with an indium-tin oxide (ITO) current-spreading layer and PIN photodiodes without ITO deposition on the light-receiving area, were simultaneously fabricated. The resultant incident photon-to-electron conversion efficiencies of the PIN photodiodes at UV wavelengths were significantly higher than those of the reverse-biased LEDs. The photocurrent signals of the PIN photodiode were then converted to voltage signals to drive an integrated visible LED, which functioned as an indicator. The more the ambient UV-light intensity exceeded a specified level, the brighter the glow of the LED. The responsivities of 0.20 and 0.16 A/W were obtained at 381 and 350 nm, respectively, under a bias voltage of 5 V. We also addressed the epitaxial structural details that can affect the collection efficiency of the photocurrent generated by UV light absorption. The crosstalk between the PIN photodiode and LEDs (of various center-to-center distances) was measured.

show abstract

InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers

Cited by 17 publications

References 27 publications

Photoluminescent Properties of Eu³⁺in Ga₂O₃:Cr³⁺Films Prepared by Metal Organic Deposition

Photoluminescent Properties of Eu³⁺in Ga₂O₃:Cr³⁺Films Prepared by Metal Organic Deposition

An Amorphous (Al_0.12Ga_0.88)₂O₃ Deep Ultraviolet Photodetector

An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes

Contact Info

Product

Resources

About

InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers

Cited by 17 publications

References 27 publications

Photoluminescent Properties of Eu3+in Ga2O3:Cr3+Films Prepared by Metal Organic Deposition

Photoluminescent Properties of Eu3+in Ga2O3:Cr3+Films Prepared by Metal Organic Deposition

An Amorphous (Al0.12Ga0.88)2O3 Deep Ultraviolet Photodetector

An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes

Contact Info

Product

Resources

About

Photoluminescent Properties of Eu³⁺in Ga₂O₃:Cr³⁺Films Prepared by Metal Organic Deposition

Photoluminescent Properties of Eu³⁺in Ga₂O₃:Cr³⁺Films Prepared by Metal Organic Deposition

An Amorphous (Al_0.12Ga_0.88)₂O₃ Deep Ultraviolet Photodetector