InGaP/InGaAs PHEMT with high IP3 for low noise applications

Lin, Y. C.; Chang, Edward Yi; Chen, G. J.; Lee, H. M.; Huang, Guo Wei; Biswas, Dhrubes; Chang, Chun Yen

doi:10.1049/el:20040458

Cited by 10 publications

(2 citation statements)

References 3 publications

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“…The designed circuit was fabricated using an in-house-developed standard pHEMT process, the details of which were included in our previous publications. 23,24) Table I lists the key process parameters for the device and passive components. Note that the parameters for the device were extracted from the measurement results of a 2 © 50 µm test device with the same gate width.…”

mentioning

confidence: 99%

Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

Chiang

Hsu

Chang

2014

Jpn. J. Appl. Phys.

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A fully integrated, monolithic, wideband linear power amplifier using pseudomorphic high-electron-mobility transistor (pHEMT) technology has been developed for long-term evolution (LTE) applications. Implemented through the stacked field-effect transistor (stacked-FET) configuration, the amplifier exhibited a small signal gain of 15 dB and an output power of 25 dBm at 1 dB compression (P 1dB) with a power-added efficiency (PAE) of 36% from 1.7 to 2.7 GHz yielding 45% power bandwidth. Moreover, when tested under a 10 MHz LTE-modulated signal, the amplifier achieved a 3% error-vector-magnitude (EVM) at 23 dBm output power over the entire power bandwidth.

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confidence: 99%

Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

Chiang

Hsu

Chang

2014

Jpn. J. Appl. Phys.

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“…4,5) The double -doped InGaP/AlGaAs/InGaAs PHEMTs was designed to further enhance the Hall mobility as compared to the InGaP/ InGaAs PHEMTs. 6) In this paper, the InGaP/AlGaAs/ InGaAs E-mode PHEMTs with double -doped of two different doping concentrations were fabricated and characterized, these two doping concentrations were desinged for achieving high efficiency and high linearity operating at low voltage supply.…”

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confidence: 99%

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

Chu¹,

Hsu²,

Chang³

et al. 2006

jjap

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A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two δ-doped layers. Biased at drain-to-source voltage VDS = 2 V, the fabricated 0.5 ×200 µm2 device exhibited a maximum transconductance of 448 mS/mm. The measured minimum noise figure (NFmin) was 0.86 dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-P1 dB of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.

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Interfacial reactions of Pt-based Schottky contacts on InGaP

Chu

Chang

et al. 2008

Applied Physics Letters

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We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm-thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325°C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325°C for 10 min. Prolonging the annealing to 3 h led to formation of Ga 2 Pt and GaPt 3 phases in InGaP and Schottky diodes degraded after these new phases were observed.

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InGaP/InGaAs PHEMT with high IP3 for low noise applications

Cited by 10 publications

References 3 publications

Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

Interfacial reactions of Pt-based Schottky contacts on InGaP

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