InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition

Diaz, J.; Eliashevich, I.; Mobarhan, K.; Kolev, E.; Wang, L.J.; Garbuzov, D. Z.; Razeghi, Manijeh

doi:10.1109/68.275405

Cited by 41 publications

(11 citation statements)

References 7 publications

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“…The advantages of using the Al-free system for laser diodes over the conventional AlGaAs-based material system are: ͑1͒ low surface recombination 1 in this material system results in lower facet temperatures in laser diodes, permitting reliable operation at high output powers, ͑2͒ higher electrical, 2 and thermal 3 conductivity of InGaP cladding layers results in better total power-conversion efficiencies at high powers, and ͑3͒ novel index-guided structures can be easily fabricated due to the absence of aluminum containing compounds at the regrowth interface. 4 Optimization of such devices however requires an understanding of the nature of quantum well ͑QW͒ growth in this material system.…”

mentioning

confidence: 99%

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Bhattacharya

Mawst

Nayak

et al. 1996

Applied Physics Letters

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We have studied the effects of substrate misorientation on the growth of strained-layer In 0.18 Ga 0.82 As quantum well laser structures with InGaAsP confinement layers and In 0.5 Ga 0.5 P cladding layers lattice matched to a GaAs substrate. Low-temperature photoluminescence ͑PL͒ and atomic force microscopy ͑AFM͒ provide evidence of a strong substrate-orientation dependence of the interface structure. The surface morphology of the InGaAs quantum well is found to be determined primarily by the underlying InGaAsP confinement layer. Structures grown on exact-͑100͒ oriented substrates exhibit three-dimensional island surface morphology, whereas growths on ͑100͒ substrates oriented 2°towards ͓110͔ exhibit high surface roughness, possibly due to step bunching. These observations correlate well with previously reported device performance from strained quantum well laser diodes in the InGaAs/InGaAsP/InGaP material system, and can serve as a tool to optimize device performance. © 1996 American Institute of Physics. ͓S0003-6951͑96͒03716-0͔The aluminum-free InGaAs/InGaAsP/InGaP material system is increasingly important for the fabrication of semiconductor lasers. The advantages of using the Al-free system for laser diodes over the conventional AlGaAs-based material system are: ͑1͒ low surface recombination 1 in this material system results in lower facet temperatures in laser diodes, permitting reliable operation at high output powers, ͑2͒ higher electrical, 2 and thermal 3 conductivity of InGaP cladding layers results in better total power-conversion efficiencies at high powers, and ͑3͒ novel index-guided structures can be easily fabricated due to the absence of aluminum containing compounds at the regrowth interface.4 Optimization of such devices however requires an understanding of the nature of quantum well ͑QW͒ growth in this material system. Recently, studies relating interface structure to photoluminescence ͑PL͒ spectra have been carried out for quantum well AlGaAs/GaAs, 5 strained InGaAs/GaAs ͑Ref. 6͒ and InGaAs/InP ͑Ref. 7͒ structures. Interface studies by atomic force microscopy ͑AFM͒ on MOVPE-grown ͑In,Ga͒͑As,P͒ materials, have mainly focused on growth mechanisms; few studies have correlated interface structure with device performance. Furthermore, the interfacial structure of strainedlayer InGaAs/InGaAsP QW structures has not been reported.Al-free lasers with GaAs or low-band-gap InGaAsP confinement layers exhibit strong carrier leakage from the InGaAs QW to the optical confinement layers, resulting in a strong temperature dependence of both threshold current and differential quantum efficiency. [8][9][10] To minimize this problem, higher band-gap InGaAsP confinement layers and multiple quantum wells are used to reduce carrier leakage, and thus reduce temperature sensitivity.9-12 The interface structure of InGaAs quantum wells on InGaAsP, integral to these improved structures, has however not been studied. In this letter, we report on the effects of substrate misorientation on the growth of strained-layer In 0....

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confidence: 99%

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Bhattacharya

Mawst

Nayak

et al. 1996

Applied Physics Letters

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“…Bournes et al from Coherent Inc. reported less than 1% degradation for 40 W laser bars during 1300 h operation at facet load of around 14 mW/mm at 25 C, which corresponded to a degradation rate of less than around 8 Â 10 À6 /h [8]. Most of semiconductor lasers with InGaAsP material system were grown in MOCVD or MOMBE (or CBE) [1,2,[4][5][6][7]. Recently solid source MBE systems with Pcracker were introduced to grow P-containing materials.…”

Section: Introductionmentioning

confidence: 99%

“…Lasers of 0.8 mm were paid more and more attention [1][2][3][4] since they were used to pump solidstate lasers and used in material processing. Lasers with InGaAsP Al-free active region have shown strong advantages over conventional AlGaAs lasers due to their resistance to dark-line defects [5], and high threshold of catastrophic optical damage (COD) [6].…”

Section: Introductionmentioning

confidence: 99%

MBE growth of reliable high-power lasers with InGaAsP quantum well

Kuang¹,

Hernández²,

McElhinney³

et al. 2004

Journal of Crystal Growth

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“…APPLIED PHYSICS LETTERS VOLUME 72, NUMBER 6 9 FEBRUARY 1998 GaAs material system has small band-gap differences, massive carrier leakage from the active region has been the major impediment to reach COMD in ͑completely͒ Al-free laser structures in the 800-nm-wavelength region. 10,11 The use of high-band-gap Al-containing cladding layers has been shown to be effective in reducing carrier leakage in similar broad waveguide structures, incorporating a lattice-matched InGaAsP quantum well, emitting at 810 nm. 12 Therefore, In 0.5 ͑Ga 0.5 Al 0.5 ͒ 0.5 P ͑0.75 m͒ cladding layers were employed to reduce carrier leakage.…”

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confidence: 99%

730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells

Al-Muhanna

Wade

Mawst

et al. 1998

Applied Physics Letters

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0.73-m-emitting, Al-free active-region, strained (⌬a/aϷ1.4%) InGaAsP single-quantum-well diode lasers have been grown by low-pressure metal-organic chemical-vapor deposition. A broad waveguide laser design with In 0.5 ͑Ga 0.5 Al 0.5 ͒ 0.5 P cladding layers is utilized to achieve a large effective transverse spot size (d/⌫ϭ0.433 m) and to minimize carrier leakage from the active region. Threshold current densities of 514 A/cm 2 ͑100-m-wide stripe, Lϭ1 mm͒, external differential quantum efficiencies of 60%, and characteristic temperature coefficients for the threshold current, T 0 , and external differential quantum efficiency characteristic temperature, T 1 , have values of 72 and 153 K, respectively. Continuous wave output powers of 1.4 W are obtained from facet-coated (90%/10%) devices operating at 735 nm. © 1998 American Institute of Physics. ͓S0003-6951͑98͒01306-0͔High output power diode lasers with wavelengths in the 730-780 nm range are needed for a variety of applications ranging from laser printing and optical recording to cancer treatments such as photodynamic therapy. For wavelengths less than 840 nm, typical laser structures use AlGaAs in the active region, which can result in long-term reliability problems. As the emission wavelength decreases less than 780 nm, the high aluminum content of the Al x Ga 1Ϫx As active layer (xϾ0.1) makes reliable high-power operation increasingly difficult to achieve. Using a specially processed oxygen gettered aluminum source for the metal-organic chemicalvapor deposition ͑MOCVD͒ growth process, AlGaAs activelayer devices ͑100-m-wide emission aperture͒ have been reported with continuous wave ͑cw͒ output powers of 540 mW at an emission wavelength of 715 nm. 1 More recently, compressively strained AlGaInAs active-layer lasers have been reported in the 730-nm wavelength range demonstrating 2.2-W cw output powers from broad-stripe ͑100-mwide͒ devices. 2 Although high output powers have been obtained from the AlGa͑In͒As active-layer devices, 1,2 longterm reliability is still an open question.The use of an InGaAsP active-region offers an attractive alternative to conventional AlGaAs-based structures for short-wavelength, high-power sources. The lower surface recombination velocity of InGaAsP compared with AlGaAs leads to a dramatic reduction in facet-temperature rise during high-power cw operation. 3 In fact, Al-free active-region lasers in the 800-nm-wavelength region have recently demonstrated catastrophic optical mirror damage ͑COMD͒ at an internal power density, P COMD , of 17.5 MW/cm 2 , which is more than twice the value reported for AlGaAs active devices at the same wavelength. 4 Another advantage of using an InGaAsP-based active region is the ability to employ a strained-layer or strain-compensated quantum-well active region. Tensile-strained ͑In͒ GaAsP active-layer lasers have been reported operating in the 700-800 nm wavelength range. 5 However, little is known about the properties of compressively strained quantum-well lasers in this wavelength region. The advantag...

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InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition

Cited by 41 publications

References 7 publications

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

MBE growth of reliable high-power lasers with InGaAsP quantum well

730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells

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