InGaP PHEMTs for wireless power applications

Lan, E.; Pitts, B.; Mikhov, Mikho; Hartin, O.

doi:10.1109/mwsym.2001.967341

Cited by 5 publications

(1 citation statement)

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“…Recently, the use of InGaP instead of AlGaAs in the device structure has become very popular [5]- [7]. The InGaP-InGaAs PHEMTs have many advantages over the AlGaAs-InGaAs PHEMTs.…”

Section: Introductionmentioning

confidence: 99%

2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

Chu

Chang

Chen

et al. 2005

IEEE Electron Device Lett.

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A low-voltage single power supply enhancement-mode InGaP-AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PHEMT) is reported for the first time. The fabricated 0.5 160 m 2 device shows low knee voltage of 0.3 V, drain-source current ( DS ) of 375 mA/mm and maximum transconductance of 550 mS/mm when drain-source voltage ( DS ) was 2.5 V. High-frequency performance was also achieved; the cut-off frequency( ) is 60 GHz and maximum oscillation frequency( max ) is 128 GHz. The noise figure of the 160-m gate width device at 17 GHz was measured to be 1.02 dB with 10.12 dB associated gain. The E-mode InGaP-AlGaAs-InGaAs PHEMT exhibits a high output power density of 453 mW/mm with a high linear gain of 30.5 dB at 2.4 GHz. The E-mode PHEMT can also achieve a high maximum power added efficiency (PAE) of 70%, when tuned for maximum PAE.

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“…Recently, the use of InGaP instead of AlGaAs in the device structure has become very popular [5]- [7]. The InGaP-InGaAs PHEMTs have many advantages over the AlGaAs-InGaAs PHEMTs.…”

Section: Introductionmentioning

confidence: 99%