A low-voltage single power supply enhancement-mode InGaP-AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PHEMT) is reported for the first time. The fabricated 0.5 160 m 2 device shows low knee voltage of 0.3 V, drain-source current ( DS ) of 375 mA/mm and maximum transconductance of 550 mS/mm when drain-source voltage ( DS ) was 2.5 V. High-frequency performance was also achieved; the cut-off frequency( ) is 60 GHz and maximum oscillation frequency( max ) is 128 GHz. The noise figure of the 160-m gate width device at 17 GHz was measured to be 1.02 dB with 10.12 dB associated gain. The E-mode InGaP-AlGaAs-InGaAs PHEMT exhibits a high output power density of 453 mW/mm with a high linear gain of 30.5 dB at 2.4 GHz. The E-mode PHEMT can also achieve a high maximum power added efficiency (PAE) of 70%, when tuned for maximum PAE.

Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-doublethrow (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input 1 dB ) of 27 dBm at 2.5 GHz. These switches were annealed at 250 for 20 h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.

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