High power Al _0.3 Ga _0.7 As/In _0.2 Ga _0.8 As enhancement-mode PHEMT for low-voltage wireless communication systems

A compact analytical I–V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model

“…AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors (p-HEMTs) are potential devices both for microwave and highspeed digital applications [1][2][3][4][5][6]. This is because of the high low-field electron mobility and high saturation velocity of electrons in the InGaAs material used for the channel.…”

A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

“…[15][16][17][18] Only a few studies have been performed for characterizing the performance of enhancement-mode (E-mode) InAs channel HEMTs, because high-performance E-mode In x -Ga 1−x As HEMTs are difficult to fabricate, even though only a single-voltage supply is required for an E-mode device, making the circuit design simple and reducing the overall system production cost. 19) In the present work, 60-nm-thick E-mode In 0.65 Ga 0.35 As=InAs=In 0.65 Ga 0.35 As composite-channel HEMTs were fabricated by using the Au=Pt=Ti-based non-annealed Ohmic contact technology. The characteristics of E-mode In 0.65 Ga 0.35 As=InAs=In 0.65 Ga 0.35 As HEMTs for logic applications, such as a gate delay, an I ON =I OFF ratio, a drain-induced barrier lowering (DIBL), and a sub-threshold slope (SS) were evaluated.…”

Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications

“…8 E-mode device technology has drawn considerable attention because it requires only a single-voltage supply for operation, resulting in simpler design and lower system production costs. 13 The current study investigated an E-mode In 0.65 Ga 0.37 As/InAs/In 0.65 Ga 0.37 As compositechannel HEMT for determining its potential for use in high-speed and low-power logic applications.…”