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In order to take the advantages of diamond and carbon coating on flat-panel display, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BENcarburized Si tips can be reduced below 300 A under low deposition temperature (<550 "C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultrasharp DLC-clad Si FEAs with enhanced emission ability.

Field emitter arrays of very sharp silicon tips have been fabricated using wet chemical etching technique. High depthto-width ratio silicon tips have been also fabricated using the semi-anisotropic dry etching technique. After the oxidation sharpening process, uniformly sharp emitter tips has been achieved. A new self-aligned process to fabricate the gated emitter arrays has been successfully developed. By this method, the tip radius is about 25 nm, and the gate aperture diameters can be easily reduced to 1.2 pm and even more. This will largely decrease the turn-on voltage of the field enission devices.