Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

Adnane, M.; Bougrioua, Z.; Gibart, P.

doi:10.1016/j.jcrysgro.2006.10.250

Cited by 19 publications

(17 citation statements)

References 8 publications

(14 reference statements)

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“…This pollution peak is confined to less than 30 nm and contains approximately 2 Â 10 13 cm À2 atoms. The location and sharpness of this pollution peak confirm that it is located at the regrowth interface, and is probably due to the exposure to air and/or annealing prior to regrowth as proposed by several authors [7,12,14]. The profiles for other contaminants like carbon and oxygen remain unchanged through the regrowth interface, probably because they are not far from the detection limit.…”

Section: Growth On Standard Templatessupporting

confidence: 76%

“…After inspection with a Nomarski optical microscope, each template was reloaded into the MOVPE reactor to grow the subsurface Fe-doped layers. The first kind of new template (CD template) consists of a 20-45 nm thick GaN layer continuously doped and covered with a 50-135 nm cap, whereas the second kind (MD template) consists of a Fe-delta-doped layer with an equivalent ferrocene dose [12] and covered with a 90 nm GaN cap (Fig. 1).…”

Section: Growth Of Subsurface Fe-doped Templatesmentioning

confidence: 99%

“…On the other hand, using acceptor elements can be a problem for growing high-purity films in the same reactor, and other solutions may be preferred. An alternative solution utilizing segregation and diffusion of iron located in a region close to the surface of the SI-GaN template has been first demonstrated in our laboratory for MOVPE regrowth [12]. The very different growth conditions of MBE, such as the noticeably lower growth temperature, make it necessary to adapt this approach.…”

Section: Introductionmentioning

confidence: 99%

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AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Cordier

Adnane

Baron

et al. 2007

Journal of Crystal Growth

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Section: Growth On Standard Templatessupporting

confidence: 76%

Section: Growth Of Subsurface Fe-doped Templatesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Cordier

Adnane

Baron

et al. 2007

Journal of Crystal Growth

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“…with 9 μm thick GaN. Other groups have reported AlGaN/GaN HFETs with GaN:Fe underlying layer [9][10][11]. For example, Cordier et al have reported 3×150 μm gated HFETs grown by MBE on GaN:Fe/sapphire templates grown by MOVPE.…”

Section: Device Fabricationmentioning

confidence: 99%

AlGaN/GaN HFETs on Fe‐doped GaN substrates

Oshimura

Takeda

Sugiyama

et al. 2010

Phys. Status Solidi (c)

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AlGaN/GaN HFETs with different undoped GaN thicknesses were grown on Fe‐doped freestanding GaN substrates by conventional MOVPE. To realize a high drain current, thick undoped GaN is found to be necessary. SIMS measurement shows that Fe is redistributed into the epilayer, by which the scattering center is generated at the channel when the thickness of the undoped GaN is insufficient. We also observed a similar Fe profile in the GaN/sapphire template placed on the side of the Fe‐doped GaN substrate during growth. Therefore, Fe in the Fe‐doped GaN substrate is redistributed not only through a solid but also through vapor. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…For low-loss device performance, the drain leakage current and the low sub-threshold swing are also very important parameters. Normally-on-mode AlGaN/GaN HFETs using Fe-doped GaN showed a low-loss drain current and a low sub-threshold swing [5]. Until now, there has been no report of normally-off-mode AlGaN/GaN HFETs.…”

mentioning

confidence: 99%

High drain current and low on resistance normally‐off‐mode AlGaN/GaN junction HFETs with a p‐type GaN gate contact

Fujii¹,

Nakamura

Mizuno

et al. 2008

Phys. Status Solidi (c)

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The normally‐off‐mode junction HFETs with a p‐type GaN gate contact showing high drain current and an extremely large on/off ratio were successfully fabricated by MOVPE. The drain currents were found to be very sensitive to the surface of the u‐AlGaN barrier exposed by RIE etching. A reproducible and stable high drain current was achieved using a very thin SiN passivation layer. The maximum drain current was 1.58×10–1 A/mm at VGS = 4 V, while the drain current at VGS = 0 V was as low as 1.45×10–8 A/mm. Therefore, an on/off ratio of 107 has been achieved. The sub‐threshold swing was as small as 90 mV/dec.. The on resistance was 3.4 mΩcm2, the threshold voltage was +0.45 V, and the breakdown voltage was over 325 V. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

Cited by 19 publications

References 8 publications

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

AlGaN/GaN HFETs on Fe‐doped GaN substrates

High drain current and low on resistance normally‐off‐mode AlGaN/GaN junction HFETs with a p‐type GaN gate contact

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