Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si

Kondo, Yoshiyuki; Deura, Momoko; Terada, Yuki; Hoshii, Takuya; Takenaka, Mitsuru; Takagi, Shinichi; Nakano, Yoshiaki; Sugiyama, Masakazu

doi:10.1016/j.jcrysgro.2009.11.064

Cited by 14 publications

(8 citation statements)

References 7 publications

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“…This model was tested by performing very short growth runs, where indeed a single small crystallite is found within each template. Likewise, a single nucleus per mask opening was previously reported by Kondo et al and Björk et al by selective area epitaxy.…”

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confidence: 64%

Vertical III–V Nanowire Device Integration on Si(100)

et al. 2014

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We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.

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confidence: 64%

Vertical III–V Nanowire Device Integration on Si(100)

et al. 2014

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“…We have investigated the effect of pre-flow sources introduced before the start of InAs growth. Through comparison between TBAs and TBP as the pre-flow sources, we have found that P atoms passivate Si surface more effectively than As atoms, leading to high yield nucleation in each growth area and better uniformity in both size and shape of InAs nuclei [24]. The partial pressures of TMIn (P TMIn ) and TBAs (P TBAs ) were kept constant at 0.13 and 5.4 Pa, respectively.…”

Section: Methodsmentioning

confidence: 99%

Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

Deura

Kondo

Takenaka

et al. 2010

Journal of Crystal Growth

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“…We now have obtained all the items for an improved uniformity of lateral growth: (1) phosphorus pretreatment of Si (in the previous work [21]), (2) reduced size (1 mm in diameter) of the Si windows, (3) flow-modulation growth of InAs for highyield nucleation and lateral growth, (4) self-aligned InAs growth for uniform hexagonal prisms using the boundary of the Si windows. Here, we will demonstrate an improvement in the shape uniformity of InGaAs micro-disks.…”

Section: Uniform Ingaas Micro-disksmentioning

confidence: 99%

“…It seems that both TBP and TBAs can remove surface contamination to a certain extent through surface reactions of their decomposition products such as hydrocarbon radicals. The advantage of TBP probably lies in the better surface passivation by P, rather than As due to its stronger bonding to Si, which prevents further surface contamination [21].…”

Section: Introductionmentioning

confidence: 99%