Injection amplification effect in the metal-ferroelectric-insulator-semiconductor thin film structure

Baginskii, I. L.; Erkov, V. G.; Kostov, E.G.; Likhachev, A. A.

doi:10.1016/0040-6090(91)90089-g

“…The difference between the reported devices and the transistor proposed by Salahuddin [1] is the insertion of a linear dielectric as a buffer layer due to the diffusion of the ferroelectric into the silicon [10]. We should clarify that the surface potential enhancement due to the ferroelectric's negative capacitance effect is entirely different from the amplifying effect on the tunneling current through the gate oxide as a result of the presence of a ferroelectric layer in tunneling read-only memory devices [11][12][13]. The ferroelectric stability condition to obtain the negative capacitance effect for this kind of device has not previously been reported.…”

Section: Introductionmentioning

confidence: 77%

A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification

Jiang¹,

Liang²,

Wang³

et al. 2015

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The difference between the reported devices and the transistor proposed by Salahuddin [1] is the insertion of a linear dielectric as a buffer layer due to the diffusion of the ferroelectric into the silicon [10]. We should clarify that the surface potential enhancement due to the ferroelectric's negative capacitance effect is entirely different from the amplifying effect on the tunneling current through the gate oxide as a result of the presence of a ferroelectric layer in tunneling read-only memory devices [11][12][13]. The ferroelectric stability condition to obtain the negative capacitance effect for this kind of device has not previously been reported.…”

Section: Introductionmentioning

confidence: 96%

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

Rusu¹,

Saeidi²,

Ionescu³

2016

View full text Add to dashboard Cite

In this paper, we report a detailed study of the negative capacitance field effect transistor (NCFET). We present the condition for the stabilization of the negative capacitance to achieve the voltage amplification across the active layer. The theory is based on Landauʼs theory of ferroelectrics combined with the surface potential model in all regimes of operation. We demonstrate the validity of the presented theory on experimental NCFETs using a gate stack made of P(VDF-TrFE) and SiO 2 . The proposed analytical modeling shows good agreement with experimental data.

show abstract

“…The features of hetero‐structures are strongly influenced by interfacial characteristics. The interface‐states density ( D ) of a metal‐insulator‐semiconductor (MIS) structure or metal‐oxide‐semiconductor (MOS) one is an important parameter that changes the behaviors of all devices . There exist interfacial states in hetero‐structures, and there are also many ways to create or decreases the density of interface states .…”

Section: Introductionmentioning

confidence: 99%

Prediction of the density of interfacial state produced by radiation in NMOS

Changshi

¹

,

Feng

²

2013

Int J Numerical Modelling

1

0

View full text Add to dashboard Cite

This paper is aimed at the description of the mathematical relationships between energy position in the band gap and the density of interfacial state in N-type metal-oxide-semiconductor (NMOS) capacitor irradiated by 60 Co. Substantial differences of density of interfacial state caused by physical environment are observed. On the basis of non-linear curve fitting, a typical numerical method is used to quantitatively analyze the energy-dependent density of interfacial state. The simulations agree very well with the observed spectra (density of interfacial state versus the energy position in the band gap). The minimum correlation coefficient between the actual data and calculated one is 0.953. The average relative errors between the measured and modeled quantities do not exceed 6.32% in all considered cases. To my knowledge, it is the first time that the density of interfacial state can be predicted via energy level in the full range of band gap.

show abstract

Injection amplification effect in the metal-ferroelectric-insulator-semiconductor thin film structure

Cited by 13 publications

References 13 publications

A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification

A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

Prediction of the density of interfacial state produced by radiation in NMOS

Contact Info

Product

Resources

About