Injection dependence of spontaneous radiative recombination in c-Si: experiment, theoretical analysis, and simulation

Altermatt, Pietro P.; Geelhaar, Frank; Trupke, Thorsten; Dai, Xianzhe; Neisser, A.; Daub, E.

doi:10.1109/nusod.2005.1518128

Cited by 30 publications

(18 citation statements)

References 11 publications

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“…The bulk component τ b includes the intrinsic components due to Auger and radiative recombination , which will here be described by Richter's parameterisation , with the radiative recombination term B rel from Ref. and B low from Ref. .…”

Section: Characterising Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

235

161

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

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Section: Characterising Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

235

161

View full text Add to dashboard Cite

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“…The equation for τ bulk as a function of excess carrier concentration (∆n) is: (6) In Equation 4, B low is the radiative recombination coefficient as measured by Trupke 15 for lightly doped silicon and B rel is the relative radiative recombination coefficient determined by Altermatt. 14 The product of these two coefficients account for the radiative recombination component of bulk crystalline silicon. Both B low and B rel are temperature sensitive.…”

Section: A Bulk Recombination Modelmentioning

confidence: 99%

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

et al. 2016

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This work adapts a model to simulate the carrier injection dependent minority carrier lifetime of crystalline silicon passivated with hydrogenated amorphous silicon at elevated temperatures. Two existing models that respectively calculate the bulk lifetime and surface recombination velocity are used and the full temperature dependency of these models are explored. After a thorough description of these temperature dependencies, experimental results using this model show that the minority carrier lifetime changes upon annealing of silicon heterojunction structures are not universal. Furthermore, comparisons of the temperature dependent model to using the room temperature model at elevated temperatures is given and significant differences are observed when using temperatures above 100 °C. This shows the necessity of taking temperature effects into account during in-situ annealing experiments.

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“…The gray, solid lines show the variation of the dynamic PL lifetime due to the injection-dependent lifetime from numerical simulations, assuming that the photoconductance-based lifetime measurements represent the actual steady-state carrier lifetimes. Furthermore, we take the injection-dependent coefficient of radiative recombination into account that describes the decreasing probability of radiative recombination with increasing injection density [10]. The gray dashed lines are modeled by assuming a 10% uncertainty of the PC-based lifetime measurement [11].…”

Section: Dynamic Pl Lifetime Measurementsmentioning

confidence: 99%