Inkjet Printing Design Rules Formalization and Improvement

Mashayekhi, Mohammad; Conde, Adria; Ng, Tse Nga; Mei, Ping; Ramón, Eloi; Martínez‐Domingo, Carme; Alcalde, Ana; Terés, Lluís; Bordoll, Jordi Carrabina

doi:10.1109/jdt.2015.2405135

Cited by 21 publications

(11 citation statements)

References 11 publications

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“…All the patterning steps were performed by using inkjet printing . For substrate preparation, a heavily doped p‐type silicon wafer with 300 nm oxide layer was cleaned with acetone and 2‐propanol and treated with UV–ozone for 5 min.…”

Section: Methodsmentioning

confidence: 99%

Reducing Trap States in Printed Indium Zinc Oxide Transistors by Doping with Benzyl Viologen

Kim

2018

Adv Elect Materials

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the slow formation of self-assembled monolayers. [13] The contact resistances before and after doping are compared by the transmission-line method. In addition to typical current-voltage characteristics, the devices are characterized through capacitance and admittance measurements as a function of frequency and applied bias, to gain insights into charge transport affected by trap sites. Analyses of the cutoff frequency and the parallel conductance reveal the effective mobility and the density of trap states, respectively, for comparisons of undoped and BV-doped TFTs. The Cole-Cole plot, based on the real and imaginary components of admittance, provides additional graphical analyses to understand the effect of BV treatment on interfacial states. Figure 1a shows the device structure in a bottom-gate, topcontact configuration with doped source/drain electrodes with BV molecules (shown in Figure 1b). The IZO semiconductor was deposited by inkjet, and the channel region was subsequently covered by an insulator polymer poly-4-vinylphenol (PVP). A BV solution was spin-coated onto the exposed areas, followed by a rinse with toluene to remove excess, not-ionized BV molecules. The BV treatment did not add measurable thickness, but the doping process increased wetting between the polar Ag ink and the IZO surface with ionized BV molecules. Silver ink on untreated IZO showed a contact angle of ≈30°, whereas the same Ag ink completely dispersed on the BV-treated surface, as shown in the photographs of Figure 1c. Figure 2a,b shows typical transfer and output characteristics of undoped and BV-doped TFTs. The BV-doped TFT shows a more negative threshold voltage and a higher off-current than the undoped TFT. If the entire channel is doped, the IZO becomes very conductive, and the applied electric field is not sufficient to modulate and deplete the channel. Hence, we restricted BV doping to areas underneath the source and drain contacts. There is a possibility that our process may allow the BV solution to wick underneath the PVP barrier and partially dope the channel region. However, the more likely explanation for the negative shift in threshold voltage is that the IZO layer is relatively thick at around 30 nm, and as such the BV doping leads to a very conductive area underneath the contacts that are difficult to deplete.The field-effect mobility μ is determined from the slope of the transfer curve at saturation bywhere I DS is the source-drain current, W is the channel width, L is the channel length, C g is the gate dielectric capacitance, An air-stable, strongly reducing molecule benzyl viologen (BV) is used to induce charge-transfer doping of the indium zinc oxide semiconductor in inkjet-printed thin-film transistors. The device mobility is improved from 5.8 ± 1.4 cm 2 V −1 s −1 in the undoped devices and reached up to 8.7 ± 1.0 cm 2 V −1 s −1 after BV treatment. Through measurement of frequencydependent admittance and capacitance, this work quantifies the density of interface states and shows that interfacial trap density is f...

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Section: Methodsmentioning

confidence: 99%

Reducing Trap States in Printed Indium Zinc Oxide Transistors by Doping with Benzyl Viologen

Kim

2018

Adv Elect Materials

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“…They investigated massive device failure cases and their origins . Mashayekhi et al (2015) proposed an advanced method that automatically extracts inkjet design rules by using parameterized printed patterns . Vila et al (2016) demonstrated complete characterization and automated extraction of key technology parameters using a compensation technique for inkjet pattern generation. , In 2017, Ramon et al expanded their work to include the development of a simple manufacturing process for all-inkjet-printed organic ICs with a maximum TFT yield of 81% .…”

Section: Related Workmentioning

confidence: 99%

Layout-to-Bitmap Conversion and Design Rules for Inkjet-Printed Large-Scale Integrated Circuits

et al. 2021

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Digital inkjet printing (IJP) can greatly reduce the manufacturing cost and waste of flexible large-area electronics by adding micro-fine patterns onto plastic foils. Advanced system design using IJP has been limited by the lack of an electronic design automation (EDA) approach. An EDA approach based on a vector-based layout drawing requires parameterized IJP design rules. This study proposes a layout-to-bitmap (L2B) conversion procedure and line-based design rules that leverage the existing circuit layout EDA tools for advanced IJP designs. The L2B conversion is accomplished by optimizing the parameters of the horizontal and vertical lines by varying the drop spacings and platen temperatures. Next, the line-based layouts are converted to bitmap files which are used as IJP input data for printing multiple metal layers. This study systematically investigated the development of an IJP process employing Ag nanoparticles. The physical characteristics of the proposed process were evaluated based on theories concerning inkjet-printed bead formation. The design rules for fabricating printed thin-film transistor (TFT) circuits were documented. Documentation is the first step in creating an IJP process design kit for advanced electronics design. Using the optimized L2B conversion procedure and the design rules, a 10 × 10 array of printed organic TFTs was fabricated to demonstrate the reliability of the developed process. Additionally, the fabricated printed organic TFTs indicated that the proposed process could be extended to large-scale system designs.

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“…An alternative technique to improve the printing quality for complex layouts (layouts containing multi-lines, crossings, junctions or multilayer systems) is the implementation of design kits by optical evaluation [14][15][16], showing the problems of such layouts and using pattern compensation as a possible solution for the specific ink/substrate combinations. A method to create a design kit for inkjet printing of a 4-layer (metal, dielectric, metal, and organic semiconductor) design is displayed in [17]. Layout features such as line width, spacing, corner distances and overlapping can be evaluated electrically and optically.…”

Section: Introductionmentioning

confidence: 99%

Image Analysis Based Evaluation of Print Quality for Inkjet Printed Structures

Horter

Ruehl

Yang

et al. 2023

JMMP

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Inkjet printing for printed electronics is a growing market due to its advantages, including scalability, various usable materials and its digital, pixel based layout design. An important quality factor is the wetting of the ink on the substrate. This article proposes a workflow to evaluate the print quality of specific layouts by means of image analysis. A self-developed image analysis software, which compares a mask with the actual layout, enables a pixel-based analysis of the wetting behavior by the implementation of two parameters called over- and underwetting rate. A comparison of actual and targeted track widths can be performed for the evaluation of different parameters, such as the tested plasma treatment, drop spacing (DS) and substrate temperature. To prove the functionality of the image analyses tool, the print quality of Au structures inkjet printed on cyclic olefin copolymer (COC) substrates was studied experimentally by varying the three previously mentioned parameters. The experimental results showed that the wetting behavior of Au ink deposited on COC substrates influences various line widths differently, leading to higher spreading for smaller line widths. The proposed workflow is suitable for identifying and evaluating multiple tested parameter variations and might be easily adopted for printers for in-process print quality control in industrial manufacturing.

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Inkjet Printing Design Rules Formalization and Improvement

Cited by 21 publications

References 11 publications

Reducing Trap States in Printed Indium Zinc Oxide Transistors by Doping with Benzyl Viologen

Reducing Trap States in Printed Indium Zinc Oxide Transistors by Doping with Benzyl Viologen

Layout-to-Bitmap Conversion and Design Rules for Inkjet-Printed Large-Scale Integrated Circuits

Image Analysis Based Evaluation of Print Quality for Inkjet Printed Structures

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