InN-based heterojunction photodetector with extended infrared response

Abstract

The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

Rf-Mbeを用いたファンデルワールスエピタキシーによるグラフェン構造への窒化インジウム結晶成長

“…窒化インジウム(InN)は,窒化物半導体の中で最も電子 質量が小さく(~ 0.055 m0) 1) バンドギャップが小さい(~ 0.65 eV) 2) ことから高速トランジスタ 3) や高周波デバイス 4) ,赤外受光デバイス 5) などへの応用が期待される． 一方で, 格子整合する基板材料が不在であること 6) ,窒素の平衡蒸 気圧が高く高温での成長が難しいこと 7) ,ストイキオメト Fig. 1(a)…”

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

“…The above-mentioned technological problems hamper the study of InN properties. Despite this, considerable progress in device applications of epitaxial InN has been demonstrated recently, including the fabrication of infrared photodetectors 7 , thin-film transistors 8 , photovoltaic converters 9 , and a number of terahertz-range devices 10 , 11 . One of the possible ways to overcome the lattice mismatch problem is the formation of InN-based low-dimensional structures: nanowires, quantum dots, and quantum “pyramids” 12 , 13 , 14 .…”

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

“…To date, the best results were obtained through epitaxial growth of InN on p-GaN by molecular beam epitaxy (MBE) [9]. From the point of view of optoelectronic device production, metalorganic vapor-phase epitaxy (MOVPE) is more suitable [10,11,12]. Nevertheless, MOVPE is restricted by the low decomposition rate of NH 3 , resulting in InN island growth on GaN, which deteriorates the quality of the InN films [13].…”

“…Nevertheless, MOVPE is restricted by the low decomposition rate of NH 3 , resulting in InN island growth on GaN, which deteriorates the quality of the InN films [13]. These nucleation islands also strongly affect the junction interface morphology by producing dislocation defects and causing inefficient photo-response of the devices (e.g., detectors, solar cells) [12].…”