InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM_00 emission at 716 – 755 nm

Abstract

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532 nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52 mW at 739 nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

Optically pumped VECSELs: review of technology and progress

“…The longer wavelengths in the 700-800 nm band can be reached using GaAsP and AlGaInAs QWs [95] (although, to our knowledge they are not yet used successfully as VECSEL gain mirrors) or InP QDs [96]. The 800-920 nm wavelength range can be reached by using GaAs [41,97], AlGaInAs [98] and InGaAsP [99] QWs.…”

High-Power Operation of Quantum-Dot Semiconductor Disk Laser at 1180 nm

“…While for S-K samples, 300 mW output powers at 1040 nm and 1210 nm were reported, output powers of 1.4 W at 1040 nm and 0.5 W at 950 nm were achieved for SML samples. Further work led to an increase in the output power [18] and an extension of spectral coverage by QD-SDLs to red and near-infrared regions with a few tens of milliwatts at 730 nm [24] and multiwatts at 1250 nm [25], respectively. However, the highest output power for QD-SDLs has been recently obtained to be 8.4 W at 1040 nm [8].…”

Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm

“…4 Recent work was also focused on using quantum dots (QDs) as light emitting elements in order to expand the adressable spectral range of VECSELs. 5,6 Furthermore, electrically pumped VECSELs 7-9 and generation of ultrashort pulses in the ps and fs regime using VECSELs with a semiconductor saturable absorber mirror (SESAM), 10 even with frequency doubling, 11 are recently in the focus of research.…”