InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer

Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy

“…The metamorphic HEMT devices using the graded buffer have demonstrated good performance and have been applied in the circuit applications [10,11]. Recently, the metamorphic HBTs using graded buffer layers have also been studied [12,13]. However, the low thermal conductivity of the conventional graded buffer layers, such as InAlAs, InGaP or AlGaAsSb, results in the substantial increase of junction temperature and degradation of device performance [13][14][15].…”

“…Recently, the metamorphic HBTs using graded buffer layers have also been studied [12,13]. However, the low thermal conductivity of the conventional graded buffer layers, such as InAlAs, InGaP or AlGaAsSb, results in the substantial increase of junction temperature and degradation of device performance [13][14][15]. In this case, the InP buffer layer is preferred for the metamorphic HBT applications as its thermal conductivity is very high.…”

Thermal properties of metamorphic buffer materials for growth of inp double heterojunction bipolar transistors on gaas substrates

“…Recently, due to the progressive requirements, the scaling down consideration and fabrication of deep submicron meter devices have become key roles in modern IC industry [1], [2]. In the ULSI's technologies, polysilicon and diffused resistors are widely used throughout the semiconductor industry for a variety of applications especially in a CMOS process [3]…”

“…subcollector. We have found that AlGaAsSb and InAlAs metamorphic buffer layers have very low effective thermal conductivities [2], and have earlier reported MDHBTs with higher thermal conductivity InP buffer layers [3], [4]. AlGaAsSb and InAlAs buffers have low effective thermal conductivities because they are alloy materials.…”

Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)

“…Although the use of lower indium composition may ease the material growth, it [12,13]. Many technical issues need to be addressed in terms of both growth and fabrication technologies before these devices can be considered for utilization in commercial systems.…”