InP/In 0 53 Ga 0 47 As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency max and a 207 GHz current-gain cutoff frequency were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BV was 5.5 V, while the dc current gain was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance.Index Terms-Heterojunction bipolar transistor, indium phosphide, metamorphic growth, molecular beam epitaxy.

We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz and 400 GHz max . The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8 10 19 /cm 3 to 5 10 19 /cm 3 , an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 ) and contact ( 10 -m 2 ) resistivities are in part responsible for the high max observed.

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