High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

Kim, Y.M.; Dahlstrom, M.; Lee, Sang‐Ho; Rodwell, A.J.W.; Gossard, A. C.

doi:10.1109/led.2002.1004214

Cited by 80 publications

(18 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Ref. [9], the base doping level is 3 × 10 19 /cm 3 and the corresponding current gain is 76, while the corresponding values in this study are 3 × 10 19 /cm 3 and 180, respectively. Since the thickness of the present base is the same as that in Ref.…”

mentioning

confidence: 78%

See 1 more Smart Citation

Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz

Cheng

Jin

et al. 2009

Chinese Phys. Lett.

View full text Add to dashboard Cite

To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6 × 15 𝜇m 2 exhibits current-gain cutoff frequency 𝑓𝑡 = 242 GHz at the high collector current density 𝐽𝐶 = 2.1 mA/𝜇m 2 , which is to our knowledge the highest 𝑓𝑡 reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5 V. The high-speed InP/InGaAs DHBT with high current density is very suitable for the application in ultra high-speed digital circuits.

show abstract

mentioning

confidence: 78%

“…Since the thickness of the present base is the same as that in Ref. [9], the theoretical value of the current gain should be about 133 according to Eq. ( 4).…”

mentioning

confidence: 99%

Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz

Cheng

Jin

et al. 2009

Chinese Phys. Lett.

View full text Add to dashboard Cite

show abstract

“…Noise from switching transient in digital circuits can be transmitted through Si substrate and degrades the performance of analog circuit elements. An innovative solution to the problem was previously proposed and studied [1,2,3]. Through-the-wafer porous Si (PS) was inserted into selected regions of Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits

Zhang

Chong

et al. 2011

Materials

View full text Add to dashboard Cite

A highly conductive moat or Faraday cage of through-the-wafer thickness in Si substrate was proposed to be effective in shielding electromagnetic interference thereby reducing radio frequency (RF) cross-talk in high performance mixed signal integrated circuits. Such a structure was realized by metallization of selected ultra-high-aspect-ratio macroporous regions that were electrochemically etched in p− Si substrates. The metallization process was conducted by means of wet chemistry in an alkaline aqueous solution containing Ni2+ without reducing agent. It is found that at elevated temperature during immersion, Ni2+ was rapidly reduced and deposited into macroporous Si and a conformal metallization of the macropore sidewalls was obtained in a way that the entire porous Si framework was converted to Ni. A conductive moat was as a result incorporated into p− Si substrate. The experimentally measured reduction of crosstalk in this structure is 5~18 dB at frequencies up to 35 GHz.

show abstract

“…In addition to these graded-composition approaches for InP-lattice-matched HBTs, a constantcomposition InP metamorphic buffer approach has also been investigated in recent years because it provides much better thermal conductivity. 11 No such binary material exists for a constant-composition metamorphic buffer at the 6.00 Å lattice parameter. 11 No such binary material exists for a constant-composition metamorphic buffer at the 6.00 Å lattice parameter.…”

Section: Introductionmentioning

confidence: 99%

Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Lange

Cavus

Monier

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inMolecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates J.Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growth Comparison of As-and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications J. Vac. Sci. Technol. B 22, 1565 (2004); 10.1116/1.1691412 Study of direct current characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxyIn this article we present results from heterojunction bipolar transistor ͑HBT͒ devices that were designed for low power consumption by taking advantage of the small bandgap of high-indium composition In 0.86 Ga 0.14 As in the base layer. These were grown by solid-source molecular-beam epitaxy. Both single-and double-HBT devices were grown and fabricated. The 6.00 Å lattice parameter of these device structures was accommodated by first growing metamorphic, relaxed, linearly graded In x Al 1Ϫx As buffers on semi-insulating InP substrates, grading from In 0.52 Al 0.48 As lattice-matched with InP at 5.87 Å to In 0.86 Al 0.14 As at 6.00 Å. The total thickness of each buffer was 1.2 m or greater. These graded buffer layers developed the crosshatched morphology that is associated with the strain-relaxation process. The density of threading dislocations reaching the buffer surface was measured by EPD to be as low as 2ϫ10 6 cm Ϫ2 . Although this density is still more than an order of magnitude greater than that measured for lattice-matched material on InP, these 6.00 Å HBT devices exhibited good electrical characteristics. For these electrical tests, both large ͑70ϫ70 m 2 ͒ and small ͑1.5ϫ10 or 2ϫ10 m 2 ͒ devices were fabricated. All devices exhibited significantly lower turn-on and knee voltages compared to the GaAs and lattice-matched In 0.52 Ga 0.48 As-on-InP HBT technologies. The 6.00 Å single HBT demonstrated a V BE ϳ0.4 V for operation at 1 mA compared to 0.7 V for lattice-matched In 0.52 Ga 0.48 As on InP and 1.3 V for GaAs. The 6.00 Å HBT approach additionally benefits from a favorable valence band alignment between the p-type In 0.86 Ga 0.14 As base and the n-type In 0.86 Al 0.14 As emitter, which reduces hole injection into the emitter and increases device current gain. The rf measurements of this structure exhibited a transistor cut-off frequency f T exceeding 100 GHz. Small double-HBT devices presented a breakdown voltage BV CEO Ͼ2 V, which was twice that of small single-HBT devices. This enables further vertical scaling of the device to reduce the collector transit time.

show abstract

High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

Cited by 80 publications

References 8 publications

Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz

Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz

Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits

Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

Contact Info

Product

Resources

About