InSb photodetectors with PIN and nBn designs

Evirgen, A.; Abautret, Johan; Pérez, Jean-Philippe; Aït‐Kaci, H.; Christol, Philippe; Fleury, J.; Sik, H.; Nedelcu, Adrian; Cluzel, R.; Cordat, A.

doi:10.1117/12.2039156

Cited by 11 publications

(11 citation statements)

References 19 publications

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“…Such devices are anticipated to be reconfi gurable at GHz time scales and capable of mimicking nearly all linear refractive and diffractive optical elements. Heterojunction devices using InSb and InAlSb layers, (infrared detectors, [ 55,64 ] LEDs, [ 65,66 ] transistors, [ 58,67,68 ] etc.) similar to the proposed structure have been demonstrated with comparable device characteristics.…”

Section: Discussionmentioning

confidence: 99%

“…At all voltages, we assume an Auger-limited lifetime of 135 ps, a value consistent with studies of optically pumped InSb. [ 51,53 ] We use worst-case values of reported carrier lifetimes [53][54][55][56] and mobilities [ 52,57,58 ] at high carrier concentrations to identify phenomena that do not rely on optimistic input parameters. These recombination processes enable high-speed GHz operation (subject to suitable RC time constants) in the high injection forward bias scheme.…”

Section: Full Paper Full Paper Full Papermentioning

confidence: 99%

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Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Iyer

Pendharkar

Schuller

2016

Advanced Optical Materials

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paradigm in reconfi gurable metasurfacebased optics. Here, we use electromagnetics and device simulations to design electrically pumped semiconductor heterostructure resonators capable of arbitrarily tuning the refl ection phase of infrared light with little change in amplitude.Previous approaches for tuning metasurfaces-using metallic resonators coupled to an index tunable background [ 8,[23][24][25][26][27][28] or mechanically changing the shape of metallic resonators [ 5,29,30 ] have been unable to achieve reconfi gurable 2π phase shifts. This inability to achieve 2π phase control stems fundamentally from the nature of the underlying optical antennas. Because the light-matter interaction lengths are subwavelength and the quality factors modest ( Q ≈ 1−10), very large refractive index modulation is needed (Δ n ≥ 1). InSb [31][32][33] or InAs [ 27,34,35 ] support free-carrier index shifts of this magnitude due to their high mobility and low electron effective mass. In our previous theory work, [ 36 ] we demonstrated full 2π tuning of the transmission phase of semiconductor metasurface by modulating the carrier concentration in InSb resonators between 10 17 -10 18 cm −3 . However, we did not consider how to achieve such modulation. Here, we use combined electromagnetic [ 37 ] and device simulations to demonstrate subwavelength 1D heterojunction device resonators with electrically reconfi gurable refl ection phase. We fi rst demonstrate a new resonator geometry that allows for integration of metal electrodes with dielectric-type Mie resonances. Subsequently, we incorporate an InSb based heterojunction device layer into the resonator architecture. This novel device design employs electron and hole blocking layers to achieve large modulations of carrier concentration over electrically large dimensions, enabling near-2π tuning of refl ection phase with minimal changes in refl ection amplitude. Finally, we demonstrate fully continuous and tunable steering of high-quality narrow, diffraction lobes in resonator arrays. Results and DiscussionGiven the need for integrating top and bottom electrical contacts, our basic metasurface element is a modifi ed version of a 1D "strip" resonator sitting atop a refl ecting back electrode shown in

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Section: Discussionmentioning

confidence: 99%

Section: Full Paper Full Paper Full Papermentioning

confidence: 99%

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Iyer

Pendharkar

Schuller

2016

Advanced Optical Materials

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“…Using the HgCdTe benchmark known as Rule 07, we compare the experimental data for barrier detectors with a simple empirical relationship that describes the dark current behavior of HgCdTe photodiodes with temperature and wavelengths. [17][18][19][20][21] The cut-off wavelength was taken as the point of a 50% response. Figure 5 shows the dark current density in MWIR barrier detectors published in the literature for comparison with Rule 07.…”

Section: Comparison With Experimental Datamentioning

confidence: 99%

Performance comparison of barrier detectors and HgCdTe photodiodes

Martyniuk

Rogalski

2014

Opt. Eng

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Barrier detectors are designed to reduce the dark current associated with Shockley-Read (SR) processes and to decrease the influence of surface leakage current without impeding photocurrent (signal). As a consequence, the absence of a depletion region in barrier detectors offers a way to overcome the disadvantage of the large depletion dark current. Therefore, they are typically implemented in materials with relatively poor SR lifetimes, such as all III-V compounds. It is shown here that despite numerous advantages of III-V barrier detectors over present-day detection technologies, including reduced tunneling and surface leakage currents, normal-incidence absorption, and suppressed Auger recombination, the promise of a superior performance with these detectors in comparison with HgCdTe photodiodes has not been realized yet. The dark current density is higher than that of bulk HgCdTe photodiodes, especially in the mid-wavelength infrared range.

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“…1, a. Как при U < 0, так и при U > 0 по мере увеличения смещения возникает резкий рост тока по абсолютной величине (вставка на рис. 1, а), однако для положительной и отрицательной областей этот рост начинается при разных смещениях: • 10 −6 −10 −2 A/cm 2 ) в nBn-гетероструктуре меньше, чем плотность тока в типичных pin-структурах ( j = 5 • 10 −5 − 1 A/cm 2 ) в том же диапазоне температур при U = −50 mV [8]. Понижение плотности тока показывает, что внедренный барьер блокирует часть основных носителей заряда и тем самым понижает плотность темнового тока.…”

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AlInSb/InSb-гетероструктуры для ИК-фотоприемников, выращенные методом молекулярно-лучевой эпитаксии

Суханов¹,

Бакаров²,

Протасов³

et al. 2020

Письма В Журнал Технической Физики

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A photodetector heterostructure based on AlInSb / InSb grown by molecular beam epitaxy was presented. Mesastructures of various diameters were fabricated and the temperature dependence of the dark current was measured. It was shown that the built-in barrier blocks the flow of the main charge carriers, thereby reducing the dark current density, in comparison with the pin structure based on InSb. By measuring the dependence of the dark current on the size of the mesastructure, it was shown that the bulk component of the current prevails over the surface component.

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InSb photodetectors with PIN and nBn designs

Cited by 11 publications

References 19 publications

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Performance comparison of barrier detectors and HgCdTe photodiodes

AlInSb/InSb-гетероструктуры для ИК-фотоприемников, выращенные методом молекулярно-лучевой эпитаксии

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