faces constraints in manufacture and geometrical reduction in scaling. [2] In this context, π-conjugated organic molecules (COMs) represent a niche technology within the plastic electronics community that has gained tremendous attention due to their well-defined molecular architecture, high purity and reliable batch to batch synthesis. [3] The versatile scalability of organic molecules opens up a suite of inventive fabrication strategies [1] and presents a compelling incentive for device miniaturization [4,5] as well as large scale fabrication. Their immense prospects were envisaged to have major implications in myriad of applications like organic field-effect transistors (OFETs), [6,7] optoelectronic textiles, [8,9] organic electrochromic devices (OECDs), [10,11] organic light emitting diodes (OLEDs), [12,13] organic solar cells (OSCs), [14,15] organic photodetectors (OPDs), [16,17] and organic resistive memory devices (ORMs), [18,19] etc., which are expected to transform the electronics industry. Displaying attractive properties such as low power consumption, high speed switching, [20] 3D stacking capability, [21] and impressive endurance, COMs are strong contenders to realize low-cost ORM devices with an impetus to design nanoscale or molecular scale memory for achieving high density data storage (HDDS). [5,22] A comprehensive understanding of resistive switching phenomenon and its dependence on molecular structure is imperative for enhancing the consistency and reliability of organic resistive memory (ORM) devices. Here, the efforts are directed to establish a premise for providing detailed insights into the molecular property, thin film assembly, and digital memory performance of a 1,4-dihydropyrrolo[3,2-b]pyrrole (DHPP) derivative. The fabricated devices display switching characteristics with an I ON/OFF ratio of ≈10 5 , howbeit, with a "temporary remanence" of ≈2 min. The ON state can be sustained under a constant electrical duress of −1 V and can be repeatedly reprogrammed for >110 cycles. Conductive atomic force microscope (C-AFM) studies demonstrate that the thin film can be electrically written to a "0" or "1" state under extremely low compliance currents of ±250 pA with an appreciable ON/OFF ratio of 10 2 . Conservative estimates for the switching area of ≈150 nm 2 with energy as low as 15 fJ to induce a switching event underscore the possibility of nanoscale data storage with high areal density. The role of charge transfer interactions during the OFF to ON transitions and the origin of volatile memory behaviour are further elucidated in conjunction with electrochemical impedance studies (EIS) and theoretical simulations.
Volatile Memory