Instability dependent upon bias and temperature stress in amorphous‐indium gallium zinc oxide (a‐IGZO) thin‐film transistors

Choi, Kwang-Il; Nam, Dong Ho; Park, Jeong Gyu; Park, Sung Su; Choi, Won Ho; Han, In Shik; Jeong, Jae Kyeong; Lee, Hi Deok; Lee, Ga Won

doi:10.1889/jsid18.1.108

Cited by 15 publications

(3 citation statements)

References 20 publications

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“…Figure 9 shows the time dependence of the Vth shift (∆Vt) for conventional coplanar IGZO TFTs and the proposed FCPL/BCPL IGZO TFTs under gate-bias temperature stress. The Vth shift data caused by charge trapping mechanism can be fitted by the stretched exponential dependence model as shown below [5].…”

Section: Resultsmentioning

confidence: 99%

“…The one of critical factors of IGZO TFTs in applications and mass production is the reliability-the threshold voltage (Vth) stability, which is affected by interface charge trapping between IGZO and gate insulator (GI) [5]. It was found that the optimizing GI surface showed the less hysteresis window than the un-optimizing GI surface, and the optimizing GI surface decreased the Vth shift under gate-bias stress [6].…”

Section: Introductionmentioning

confidence: 99%

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P‐32: Improving Reliability of IGZO TFTs via the Front‐channel and Back‐channel Protecting Layers Method

Chen

Lin

et al. 2011

Symp Digest of Tech Papers

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The front-channel protecting layer has been reported to improve GI/IGZO interface and result in undamaged GI surface in coplanar bottom gate IGZO TFTs, and the proposed TFT structures with additional front and back channel protecting showed an effective improvement of Vth shift under both positive and negative gate-bias stress. The mechanism of Vth shift under the stress has also been studied by this structure. Both front and back channel surfaces are significant. Damage and contamination of these surfaces lead to an increase of Vth instability.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

P‐32: Improving Reliability of IGZO TFTs via the Front‐channel and Back‐channel Protecting Layers Method

Chen

Lin

et al. 2011

Symp Digest of Tech Papers

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“…Furthermore, it is important to note that the performance stability of metal oxide TFTs is not only an issue on solution-processed devices, but also one that is observed in vacuumprocessed TFTs. For this reason, there is an ample body of research on the effects of mechanical bending, humidity, light, gate bias stress or temperature on the stability of these devices [31,104,105]. This is necessary in order to understand the degradation mechanisms of flexible TFTs and improve the robustness of the resulting circuits and systems.…”

Section: Flexible Metal Oxide Tftsmentioning

confidence: 99%

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Cantarella

Costa

Meister

et al. 2020

Flex. Print. Electron.

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Thanks to the extraordinary advances flexible electronics have experienced over the last decades, applications such as conformable active-matrix displays, ubiquitously integrated disposable flexible sensor nodes, wearable or textile-integrated systems, as well as imperceptible and transient implants are now reachable. To enable these applications, specialized analog circuits able to transmit and receive data, condition sensors' parameters, drive actuators or control powering devices are required. High-performance sensor conditioning, driving and transceiver circuits on a wide range of flexible substrates are therefore extremely important to develop. However, the currently available materials and processes compatible with mechanically flexible substrates impose massive limitations in terms of large-area uniformity, device dimensions' shrinkability and circuit design, challenging the realization of flexible analog systems. Among state-of-the-art technologies employing low-temperature fabrication processes, thin-film transistors (TFTs) based on metal oxide semiconductors represent the potentially best compromise in terms of prize, performance, technology maturity and capacity to realize complex systems. This is why metal oxide TFTs are nowadays widely used for flexible, light-weight, transparent, stretchable and bio-degradable analog circuits and systems. Here, we review the current trends of flexible metal oxide TFTs for analog applications. First, an introduction is given, where current challenges and requirements related to the realization of flexible analog circuits and systems are analysed. Additionally, TFT performance parameters and configurations are briefly revised. Then, the recent advances in the field of flexible metal oxide TFTs for analog applications are summarized. In particular, all reported approaches to reduce the channel length and improve the AC performance are shown. Next, the current state of flexible metal oxide TFT-based analog circuits is shown, discussing n-type only and complementary circuit configurations. The last topic of the review covers systems based on flexible metal oxide analog circuits. Finally, a conclusion is drawn and an outlook over the field is provided.

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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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Instability dependent upon bias and temperature stress in amorphous‐indium gallium zinc oxide (a‐IGZO) thin‐film transistors

Cited by 15 publications

References 20 publications

P‐32: Improving Reliability of IGZO TFTs via the Front‐channel and Back‐channel Protecting Layers Method

P‐32: Improving Reliability of IGZO TFTs via the Front‐channel and Back‐channel Protecting Layers Method

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

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