International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
DOI: 10.1109/iedm.1998.746347
|View full text |Cite
|
Sign up to set email alerts
|

Integrated a-Si:H/pentacene inorganic/organic complementary circuits

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
9
0

Publication Types

Select...
5
3
2

Relationship

1
9

Authors

Journals

citations
Cited by 20 publications
(9 citation statements)
references
References 9 publications
0
9
0
Order By: Relevance
“…1 Moreover, large-scale integration 2 and switching frequencies of several kHz have been achieved for organic p channel as well as organic and hybrid complementary logic circuits. [3][4][5][6] For digital circuits, the inherent advantages of using complementary logic based architectures are well known. Ambipolar transistor materials offer the additional advantage that only one material has to be deposited.…”
Section: Fast Organic Electronic Circuits Based On Ambipolar Pentacenmentioning
confidence: 99%
“…1 Moreover, large-scale integration 2 and switching frequencies of several kHz have been achieved for organic p channel as well as organic and hybrid complementary logic circuits. [3][4][5][6] For digital circuits, the inherent advantages of using complementary logic based architectures are well known. Ambipolar transistor materials offer the additional advantage that only one material has to be deposited.…”
Section: Fast Organic Electronic Circuits Based On Ambipolar Pentacenmentioning
confidence: 99%
“…OTFT circuits have been reported on silicon substrates [1], [2], on glass [3], [4], and on polyimide, a high-temperature engineering polymer [5]. Functional circuits containing as many as 864 transistors have been built [6].…”
Section: Introductionmentioning
confidence: 99%
“…These include p-channel FET circuits, 4,12,13 complementary circuits, 5,10,11 and hybrid organic/inorganic complementary circuits. 14,15 Each approach has its advantages and disadvantages. Circuits formed with only p-channel FETs require one active material and may not require patterning of the active material.…”
Section: Introductionmentioning
confidence: 99%