Integrated BiCMOS p-i-n Photodetectors With High Bandwidth and High Responsivity

Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation

“…for < 480 nm) is commonly used in shortdistance optical communications [1] and optical storage systems [2,3] and also has many applications in biomedical and environmental fields [4,5]. Fast and efficient photodetectors, with high sensitivity, responsivity, speed performance, and low dark current are increasingly required.…”

100 ps Optical pulse generator using laser diodes for visible light communication applications

“…Recently, short distance free‐space optical communication and polymer optical fiber (POF) communication toward Gigabit and multi‐Gigabit with wavelength in the visible range have received much attention. Short optical pulses with peak power of several milliwatts provide powerful tools to evaluate frequency characteristics of POF and response characteristics of ultrafast photodetector devices . In addition, it also can be used as an excitation light source for optical time‐domain reflectometers .…”

7-Gb/s monolithic photoreceiver fabricated with 0.25-.MU.m SiGe BiCMOS technology

“…One possibility for realizing such integration is using Si as the photodetector materials for 850 nm light, which allows very straight-forward fabrication of monolithic photoreceivers. However, the large penetration depth of 850 nm light in Si results in a speed limitation as well as low quantum efficiency [3]. In order to mitigate these problems, a low-doped epitaxial layer [3] or silicon-on-insulator (SOI) substrate [4] has been used.…”

“…However, the large penetration depth of 850 nm light in Si results in a speed limitation as well as low quantum efficiency [3]. In order to mitigate these problems, a low-doped epitaxial layer [3] or silicon-on-insulator (SOI) substrate [4] has been used. However, these methods require significant process modification, which increases fabrication cost and decreases process yields.…”