Integrated Current Sensing in GaN Power ICs

Moench, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, R.; Ambacher, O.; Kallfass, Ingmar

doi:10.1109/ispsd.2019.8757678

Cited by 13 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The integration of sensing with driver and power devices allows fast protection circuits. Temperature sensors [78] and current sensors based on shunts [79] or sense-FETs [80][81][82][83] can be integrated. A readout circuit for current sensors has also been published [23].…”

Section: ) Level 2: Sensingmentioning

confidence: 99%

Building Blocks for GaN Power Integration

Basler¹,

Reiner

Moench

et al. 2021

IEEE Access

Self Cite

View full text Add to dashboard Cite

GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices. This work experimentally investigates a number of key building blocks for GaN power integration. First, an overview of the active and passives devices of the technology is given with focus on area-efficient layouts for power transistors and limitations of on-chip capacitors and inductors with comparison to other IC technologies. Digital and analog basic circuits as part of device libraries are examined and optimized with regard to area-efficiency. The NOT gates have active areas as low as 56.7 µm 2 and max. static currents of 0.12 mA with high noise margins. Further digital gates are presented. For the analog circuits, differential amplifiers and voltage reference concepts are presented and compared. Finally, GaN power integration is discussed, and integration levels are defined and described. The GaN technology is compared with other IC technologies, and future challenges and perspectives are shown. GaN power integration based on building blocks aims to exploit the full potential of the lateral GaN technology in order to compete with Si-based IC technologies in the future.INDEX TERMS Gallium nitride, integrated circuit technology, power integrated circuits, logic circuits, analog circuits

show abstract

Section: ) Level 2: Sensingmentioning

confidence: 99%

Building Blocks for GaN Power Integration

Basler¹,

Reiner

Moench

et al. 2021

IEEE Access

Self Cite

View full text Add to dashboard Cite

show abstract

“…GaN-based sense-FET ICs have been already demonstrated monolithically [ 31 , 32 , 33 , 34 , 35 , 36 , 37 ] and also by external wiring of several GaN devices [ 30 , 38 ] for single discrete transistors and used in half-bridges. This work focuses only on current-mirror sensing; other current sensing methods such as shunt-sensor [ 39 , 40 , 41 , 42 , 43 ] or hall-sensor [ 44 ] integration, as well as related magnetic flux concentrators [ 45 ] or magnetic sensors [ 46 ], were also demonstrated in GaN technologies. External current sensors or two-chip solutions (GaN and Si) are also often used and investigated for GaN power electronics [ 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ].…”

Section: Introductionmentioning

confidence: 99%

Three-Phase Motor Inverter and Current Sensing GaN Power IC

Moench

Reiner

Basler

et al. 2023

Sensors

Self Cite

View full text Add to dashboard Cite

A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed. During continuous 24 V motor operation with space-vector pulse width modulation (SVPWM), the sensor signal is measured and a bidirectional measurement capability is verified. The measured risetime of the sensor signal is 51 ns, indicating around 7 MHz bandwidth (without intentional optimization for high bandwidth). The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around −7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. Integrated advanced power converter topologies with sensors improve the power density of power electronics applications, such as for low-voltage motor drive.

show abstract

“…Traditional current monitoring methods are based on shunt resistor measurements [5]. Recently, researchers at Fraunhofer Institute for Applied Solid State Physics demonstrated a shunt resistor technique for GaN high electron mobility transistors (HEMTs) [6]. Although purposeful, the shunt technique is not optimal for converters with 99% efficiency at frequencies higher than 65 kHz [7] and lacks galvanic isolation.…”

Section: Introductionmentioning

confidence: 99%