Integrated GaAs Schottky mixers by spin-on-dielectric wafer bonding

Marazita, Steven M.; Bishop, W.L.; Hesler, Jeffrey L.; Hui, K.; Bowen, Willie; Crowe, T.W.

doi:10.1109/16.842956

Cited by 65 publications

(26 citation statements)

References 22 publications

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“…To overcome a large shunt capacitance caused by the coplanar contact pads, a surface channel diode, shown in Fig. 31(a), was proposed [112]. The planar diode soldered onto a microstrip circuit (e.g., a thin quartz substrate) is mounted into a waveguide mixer block.…”

Section: Pyroelectric Detectormentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

322

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Pyroelectric Detectormentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

322

225

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“…A large variety of terahertz detectors include bolometers, 3 pyroelectric detectors, Schottky diodes, 4 or photoconducting dipole antennas. 5 Most of these detectors are cumbersome and/or require cryogenic temperature operation.…”

mentioning

confidence: 99%

Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

Теппе

Veksler

Kachorovski

et al. 2005

Applied Physics Letters

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We report on the room-temperature, resonant detection of femtosecond pulsed terahertz radiation obtained by optical rectification in a ZnTe crystal. The detection was realized using a 250nm gate length GaAs∕AlGaAs heterostructure field-effect transistor. We show that physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is strongly enhanced by increasing the drain current and driving the transistor into the plasma wave instability region. Our results clearly show that plasma wave nanometer transistors can be efficient and fast detectors for terahertz spectroscopic imaging based on the femtosecond pulsed THz sources.

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“…Both direct epitaxial growth and epitaxial transfer methods have been used for the heterogeneous integration of III-Vs on Si [6]. For microwave applications a GaAs MESFET [7], an InGaP/ GaAs [8] [12] and AlN have been presented. However, direct integration of these integrated circuits onto Si, and the studies of the thermal properties and losses have not been shown.…”

Section: Introductionmentioning

confidence: 99%

Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

Malko

Vukušić

Stake

2013

IEEE Electron Device Lett.

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Abstract-We present an integrated heterostructure barrier varactor (HBV) frequency tripler on silicon substrate. The InGaAs/ InAlAs/ AlAs material structure was transferred onto the silicon wafer using low temperature plasma assisted bonding. The presented multiplier operates in the W-band (90-110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9 % 3-dB bandwidth.Index Terms-Frequency multipliers, heterostructure barrier varactors, heterogeneous integration, integrated circuits, millimeter-wave diodes, silicon, wafer bonding, III-V semiconductors.

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Integrated GaAs Schottky mixers by spin-on-dielectric wafer bonding

Cited by 65 publications

References 22 publications

Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

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