Integrated Mems Switch Technology on Soi-Cmos

Abstract

We describe an RF MEMS contact switch technology that has been integrated above a 0.5um silicon RFCMOS-on-SOI process. This integration strategy combines a MEMS gold cantilever contact-switch with a custom silicon-on-insulator IC platform. This IC platform provides several power management functions critical for MEMS including high voltage generation, control and analog/digital/RF circuits... The technology also includes a waferlevel-package dielectric encapsulation process for the MEMS device which is hermetic and compatible with low cost packaging processes.

Development and evaluation of germanium telluride phase change material based ohmic switches for RF applications

“…Other than phase change memory devices, phase change material based RF switches have drawn much attention in recent years, and works have been reported with very competi tive performance [5][6][7][8][9][10] compared to existing designs of RF switches using solid state or MEMS based techniques [11][12][13]. Specifically, please change switches with a cutoff frequency, which is a figure of merit for switches, exceeding 12 THz [7] have been reported.…”

Design of single crystal silicon based RF MEMS switch with high contact force

“…However, they suffer from the structure deformations due to residual stress and poor repeatability of key material properties as Young's modulus [7]. In consideration of the foregoing, single crystal silicon (SCS) has been employed as the structure material by many research groups to address these issues for its high-temperature stability, very low internal stress and outstanding mechanical performance.…”

Shunt RF MEMS contact switch based on PZT-on-SOI technology

“…Radant MEMS has demonstrated switch lifetimes in the hundreds of billions of cycles [2]. Teravicta [3] and RFMD [4] reported contact switches suitable for Automatic Test Equipment (ATE) and cell phone markets, respectively.…”