A 3-bit microelectromechanical system (MEMS) digital attenuator is designed with 0-20 GHz bandwidth. The attenuation ranges from 0 to 35 dB with 5 dB step. The attenuator, with the coplanar waveguide (CPW), is implemented by surface sacrificial layer technology. The DC-contact MEMS switches with three contact dimples are symmetrically placed around the T type resistor network, making the switches minimum in number and the structure compact. Through the lumped parameter method, the attenuator has good terminal matches in different attenuation states. The test results show that eight different attenuation states are realized within 0-20 GHz. The attenuation deviation is less than ±5%, the insertion loss is less than 1.7 dB and the voltage standing wave rations is less than 1.4 under most of the attenuation states. With the MEMS switches and CPW being adopted, the attenuator has the advantages of higher linearity, lower insertion loss and power consumption. The chip size is about 3.2 mm 2 including the pad.
Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 • C and 100 • C. The variable rate of pull-in voltage to temperature is about -120 mV/ • C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 • C for 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx Design of DC-contact RF MEMS switch with temperature stability
In this paper, we describe the application of through-silicon via (TSV) interconnects in Radio Frequency Micro-electro-mechanical systems (RF MEMS). Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is designed and fabricated. Measured results show an insertion loss of 1.9 dB and a bandwidth of 20%. The chip size is 9.6 9 4 9 0.4 mm 3 . Using TSV as interconnections for 3 dimensional millimeter-wave integrated circuits, a silicon micromachined vertical transition with three layers is presented. TSV, alignment, bonding and wafer thinning technologies are used to fabricate the sample. This transition has an insertion loss of less than 6.7 dB from 26 to 34 GHz and its amplitude variation is less than 2 dB. The total size of the chip is 6.3 9 3.2 mm 2 .
This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm.
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