Integrated One Diode–One Resistor Architecture in Nanopillar SiO_x Resistive Switching Memory by Nanosphere Lithography

Abstract

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

Analogue signal and image processing with large memristor crossbars

“…Compared with passive arrays that use highly nonlinear memristors 14,[37][38][39] or discrete selector devices [40][41][42][43] to mitigate the sneak path current problem, the 1T1R scheme has a lower packing density (2.5 times the cell area). However, it allows us to independently access memristors with a linear current-voltage (I-V) relation in an array with the transistor gate control, so each memristor's conductance can be precisely tuned.…”

Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

“…Several recent reports describe using SiO 2 as the active switching medium in resistive switching memory devices [46][47][48][49]. We have further demonstrated a Si diode (1D) with low reverse-bias current integrated with a SiO x -based memory element (1R) using nanosphere lithography and deep Si etching to pattern a P ++ /N + /N ++ epitaxial Si wafer [50].…”

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

“…[25][26][27][28] Thus, the unit memory cell with nonlinear current characteristics would be most desirable for processing and device simplicities. 14 In one of our previous reports, Si 3 N 4 -based RRAM device with embedded tunnel oxide was demonstrated, which exhibited a high nonlinearity (> 10 2 ) even without an additional access device. 14 We have focused on developing RRAM cells in the MIS structure which has a number of advantages over the conventional metal-insulator-metal (MIM) structure.…”

“…14 In one of our previous reports, Si 3 N 4 -based RRAM device with embedded tunnel oxide was demonstrated, which exhibited a high nonlinearity (> 10 2 ) even without an additional access device. 14 We have focused on developing RRAM cells in the MIS structure which has a number of advantages over the conventional metal-insulator-metal (MIM) structure. [16][17][18][19] In the MIS structure, the Si bottom electrode (BE) can be easily integrated through CMOS technology without complicating the backend-of-the-line (BEOL) [29][30][31][32][33][34] and has higher flexibility in physical design of RRAM devices by using an anisotropic wet etching process.…”

“…[1][2][3][4][5][6][7][8] Various resistive materials such as NiO 2 , TiO 2 , HfO 2 , TaO 2 , SiO 2 , Si 3 N 4 , and amorphous Si have been widely reported for applications to RRAM devices as the switching material. [9][10][11][12][13][14][15] Among them, Si 3 N 4 is considered one of the most interesting resistive-switching materials thanks to its abundant defects, which play an important role in resistive switching. [16][17][18][19][20][21][22][23][24] Furthermore, Si 3 N 4 -based RRAM has numerous merits of fast switching speed, low switching current, strong endurance, good retention, full compatibility to conventional Si CMOS processing, and capability of both unipolar and bipolar switching modes.…”