2023
DOI: 10.1016/j.tsf.2023.139695
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Integrated optical critical dimension metrology with Mueller matrix ellipsometry

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Cited by 4 publications
(2 citation statements)
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“…Ellipsometry-based OCD measurement methods are being studied into various types such as faster measurement speed or massive expansion of the measurable data domain to meet the requirements of the semiconductor manufacturers. Among them, spectroscopic ellipsometry using spectral signals, variable angle spectral ellipsometry (VASE) 1,2 that can measure various angles of incidence and azimuth signals, imaging ellipsometry 3,4 that can increase spatial resolution and acquire signals for a region, and micro-ellipsometry 5,6 which can measure various angle of incidence and azimuth angle in oneshot, are being studied. Among various OCD measurement methods, micro-ellipsometry is a promising OCD technique as it enables massive angular measurements and small-spot illumination.…”
Section: Introductionmentioning
confidence: 99%
“…Ellipsometry-based OCD measurement methods are being studied into various types such as faster measurement speed or massive expansion of the measurable data domain to meet the requirements of the semiconductor manufacturers. Among them, spectroscopic ellipsometry using spectral signals, variable angle spectral ellipsometry (VASE) 1,2 that can measure various angles of incidence and azimuth signals, imaging ellipsometry 3,4 that can increase spatial resolution and acquire signals for a region, and micro-ellipsometry 5,6 which can measure various angle of incidence and azimuth angle in oneshot, are being studied. Among various OCD measurement methods, micro-ellipsometry is a promising OCD technique as it enables massive angular measurements and small-spot illumination.…”
Section: Introductionmentioning
confidence: 99%
“…Benefiting from non-contact, non-destructive, fast and lowcost characteristics, optical scatterometry has been used as a * Author to whom any correspondence should be addressed. powerful tool for characterizing nanostructures in the semiconductor industry [1][2][3][4]. This technique involves measuring the corresponding scattering signatures induced by the sample and extracting the profiles by solving the inverse problem [5][6][7].…”
Section: Introductionmentioning
confidence: 99%