Integrated Silicon Photonic Laser Sources for Telecom and Datacom

Koch, Brian R.; Norberg, Erik; Kim, Byungchae; Hutchinson, John W.; Shin, Jang-Uk; Fish, G.A.; Fang, Alexander W.

doi:10.1364/nfoec.2013.pdp5c.8

Cited by 27 publications

(17 citation statements)

References 3 publications

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“…More S results [11,12,13]. We demonstrate that the use of two silicon ring resonators allows us to achieve a tuning range of more than 45 nm and a side mode suppression ratio (SMSR) larger than 40 dB over the entire tuning range [11].…”

Section: Introductionmentioning

confidence: 89%

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

et al. 2014

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Abstract-This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s. Index Terms-Hybrid photonic integrated circuits, silicon laser, semiconductor lasers, silicon-on-insulator (SOI) technology, adiabatic taper.

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Section: Introductionmentioning

confidence: 89%

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

et al. 2014

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“…A narrow linewidth laser and wide band tunable laser may potentially be addressed by using a Si photonics high Q and tunable cavity chip. There has been ongoing research on this topic in the past decade [87][88][89] and some companies are currently bringing it to telecom applications. The schematic design and the experimental results of an early work of such Si photonics external cavity tunable laser are shown in Figure 9.…”

Section: Narrow Linewidth Tunable Lasermentioning

confidence: 99%

Si Photonics for Practical LiDAR Solutions

et al. 2019

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In the article the authors discuss light detection and ranging (LiDAR) for automotive applications and the potential roles Si photonics can play in practice. The authors review published research work on Si photonics optical phased array (OPA) and other relevant devices in the past decade with in-depth technical analysis with respect to practical system design considerations. The commercialization status of certain LiDAR technologies is briefly introduced.

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“…Following this bonding step the substrate of the III-V wafers is removed and the lasers or amplifiers are further processed using standard processing techniques, including mesa etching and metallization. Such hybrid III-V on silicon lasers have mostly been demonstrated starting from InP active layers and output powers above 20mW, threshold currents below 20mA, operation till 80 o C and a wavelength tuning range of more than 45 nm were demonstrated [30,[95][96][97]. Recently also GaAs and GaSbbased devices were demonstrated [98,99].…”

Section: Wafer Scale Integration Of Lasersmentioning

confidence: 99%

Silicon Photonic Integration Platform—Have We Found the Sweet Spot?

Schmid

Reed

et al. 2014

IEEE J. Select. Topics Quantum Electron.

117

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The current trend in silicon photonics towards higher levels of integration as well as the model of using CMOS foundries for fabrication are leading to a need for standardization of substrate parameters and fabrication processes. In particular, for several established research and development foundries that grant general access, silicon-oninsulator wafers with a silicon thickness of 220 nm have become the standard substrate for which devices and circuits have to be designed. In this study we investigate the role of silicon device layer thickness in design optimization of various components that need to be integrated in a typical optical transceiver, including both passive ones for routing, wavelength selection, and light coupling as well as active ones such as monolithic modulators and on-chip lasers produced by hybrid integration. We find that in all devices considered there is an advantage in using a silicon thickness larger than 220 nm, either for improved performance or for simplified fabrication processes and relaxed tolerances.

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Integrated Silicon Photonic Laser Sources for Telecom and Datacom

Abstract: We demonstrate record performance heterogeneously integrated telecom wavelength and datacom wavelength lasers, processed simultaneously on the same wafer. Tunable lasers for telecom applications and uncooled 2x8 WDM laser arrays for datacom applications are presented.

Cited by 27 publications

References 3 publications

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

Si Photonics for Practical LiDAR Solutions

Silicon Photonic Integration Platform—Have We Found the Sweet Spot?

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