Integrated Thermally Tuned Mach-Zehnder Interferometer in Z-Cut Lithium Niobate Thin Film

Chen, Guan-Yu; Lin, Hong-Lin; Ng, Jun Da; Danner, Aaron J.

doi:10.1109/lpt.2021.3086850

Cited by 14 publications

(8 citation statements)

References 16 publications

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“…Figure 5(c) also shows that the normalized transmission spectra exhibit a highly linear shift with a slope of 42.8 pm/°C. More efficient control approach of thermo-optic tuning may rely on metal micro-heaters [27,28] . Sensitivity to fabrication errors comes with the strong confinement of the LNTF nanowaveguides.…”

Section: Resultsmentioning

confidence: 99%

Experimental investigation on the unbalanced Mach–Zehnder interferometer on lithium niobate thin film

Sun

et al. 2022

Chin. Opt. Lett.

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We design and fabricate an unbalanced Mach-Zehnder interferometer (MZI) via electron beam lithography and inductively coupled plasma etching on lithium niobate thin film. The single unbalanced MZI exhibits a maximum extinction ratio of 32.4 dB and a low extra loss of 1.14 dB at the telecommunication band. Furthermore, tunability of the unbalanced MZI by harnessing the thermo-optic and electro-optic effect is investigated, achieving a linear tuning efficiency of 42.8 pm/°C and 55.2 pm/V, respectively. The demonstrated structure has applications for sensing and filtering in photonic integrated circuits.

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Section: Resultsmentioning

confidence: 99%

Experimental investigation on the unbalanced Mach–Zehnder interferometer on lithium niobate thin film

Sun

et al. 2022

Chin. Opt. Lett.

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“…[262] By integrating lithium niobate-based devices on the same chip, using similar heterogeneous integration methods to those discussed in Section 3.3, the situation may be alleviated in the future. [66,[263][264][265][266][267][268] Looking forward, the hybrid integration of different materials on a single chip will be the trend as this can maximize advantages of different material systems simultaneously.…”

Section: Discussionmentioning

confidence: 99%

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III-V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.

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“…There are several advantages of Z-cut LN based devices compared with X/Y-cut LN. [8,13,14] First, the Z-cut TFLN offers the flexibility to modulate light perpendicular to the direction of light propagation, which can be advantageous in certain applications where modulation in the plane is not feasible or desired, [8,14,21,132,133] usually to take advantage of the fact that LN is isotropic about the Z axis but not about the X/Y axis. Second, the electrical field in Z-cut TFLN is in the vertical direction and thus will have a large overlap with the optical field along a waveguide cross section.…”

Section: Z-cut Tfln-based Modulatormentioning

confidence: 99%

Compact and Efficient Thin‐Film Lithium Niobate Modulators

Chen,

Gao,

Lin

et al. 2023

Advanced Photonics Research

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Thin‐film lithium niobate (TFLN) modulators have garnered significant attention in the field of integrated photonics due to their ability to manipulate light. Numerous TFLN modulators have been demonstrated over the past few years, with speed records consistently being broken. However, due to the low refractive index contrast and anisotropic properties of TFLN, modulators based on this material feature larger device sizes and lower efficiency. A more compact and efficient modulator is important, as it is required for future dense integration and low power consumption applications. There have been some reports on how to reduce device size, and research is ongoing. A comprehensive summary can help individuals understand the current state of research and existing problems. In this review, we provide an overview of recent advancements in TFLN modulator technology, focusing on compactness and efficiency. Herein, various types of modulators, such as the Mach–Zehnder interferometer, Michelson interferometer, resonator cavity, and Z‐cut type modulators, are discussed. Moreover, potential improvement strategies and applications for compact and efficient TFLN modulators in advanced photonic systems are explored. In conclusion, in this review, the recent achievements in compact and efficient TFLN modulators are summarized and their significance in various optoelectronic applications is emphasized.

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Integrated Thermally Tuned Mach-Zehnder Interferometer in Z-Cut Lithium Niobate Thin Film

Cited by 14 publications

References 16 publications

Experimental investigation on the unbalanced Mach–Zehnder interferometer on lithium niobate thin film

Experimental investigation on the unbalanced Mach–Zehnder interferometer on lithium niobate thin film

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Compact and Efficient Thin‐Film Lithium Niobate Modulators

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