Integration of BaTiO3 on Si (001) using MgO/STO buffer layers by molecular beam epitaxy

Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

“…Since the LNO layer is very thin compared with Si, so the shift is suggested to be the result of the thermal strain induced during the cooling process caused by the difference of thermal expansion coefficients between BTO layer and Si substrate. This corresponds well with the experimental strain states for BTO when incorporated with Si substrate [40,41]. The strain state and its effect on the structure and properties of ferroelectric BTO films will be further discussed in the part 5.…”

Fabrication and Electrochemical Properties of Epitaxial Samarium‐Doped Ceria Films on SrTiO3‐Buffered MgO Substrates

“…A similar approach has been previously reported for the deposition of high-temperature superconductor thin films onto MgO substrates. [22][23][24] The SDC/STO/MgO heterostructure was engineered in order to combine the chemical and thermal stability of the insulating MgO substrates with the structural properties of the SDC films grown on the perovskite structures. The lattice of the STO buffer layer matched well with that of both SDC and MgO.…”

MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

“…MgO is a particularly promising material owing to its large band gap energy of 8 eV, high dielectric constant of 9.8, and stability in contact with semiconductors. MgO has been epitaxially grown on GaAs [5], Si [6], GaN [7], and SiC [8] semiconductor substrates. It was also successfully used as a buffer layer for the growth of BaTiO 3 on Si and BaO(Fe 2 O 3 ) 6 on GaN [6,9].…”

“…MgO has been epitaxially grown on GaAs [5], Si [6], GaN [7], and SiC [8] semiconductor substrates. It was also successfully used as a buffer layer for the growth of BaTiO 3 on Si and BaO(Fe 2 O 3 ) 6 on GaN [6,9]. Significant lattice mismatch exists between MgO and some semiconductor substrates, which often results in the formation of polycrystalline, textured, and/or twinned films [5,7].…”

“…Thus, the ideal (0 0 1) termination of YSZ is charged (polar), similar to GaN and SiC, while that of MgO is neutral. Since YSZ is stable both under the growth conditions and with respect to MgO, we can use YSZ as a good comparative substrate to understand nucleation and growth of MgO on highly lattice mismatched, polar surfaces, in contrast to the reactive semiconductor substrates and the charge-neutral rock-salt surfaces investigated in the past [5][6][7][8][9][10][11][12]. Furthermore, YSZ (or another fluorite CeO 2 ) has been widely used as a buffer layer for the epitaxial growth of perovskite oxides on Si.…”