Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Rahman, Mohammad Wahidur; Kalarickal, Nidhin Kurian; Lee, Hyun-Soo; Rajan, Siddharth

doi:10.1063/5.0070665

Cited by 17 publications

(6 citation statements)

References 33 publications

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“…The threshold voltage shifts up to ∼4V according to poling voltage showed the modulation ability and feasibility of reconfigurable ferroelectric/GaN HEMT (figure 8(i)). Further works, including structural optimization and integration of other ferroelectric materials such as BTO, promise emerging high performance GaN HEMT application [135][136][137].…”

Section: Applications Of Heterogeneously Integrated Membranesmentioning

confidence: 99%

A review on recent advances in fabricating freestanding single-crystalline complex-oxide membranes and its applications

Park

et al. 2023

Phys. Scr.

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Complex-oxide materials are gaining a tremendous amount of interest in the semiconductor materials and device community as they hold many useful intrinsic physical properties such as ferro/piezoelectricity, pyroelectricity, ferromagnetism, as well as magnetostriction and other properties suitable for energy storage elements. Complex-oxides can also be complemented with conventional semiconductor-based devices or used by themselves to realize state-of-the-art electronic/photonic/quantum information devices. However, because complex-oxide materials have vastly different crystalline structures and lattice constant difference compared to conventional semiconductor devices (such as Si or III-V/III-N materials), integration of complex-oxides onto conventional semiconductor platforms has been difficult. Thus, there has been constant efforts to produce freestanding single-crystalline complex-oxide thin films such that these films can be transferred and integrated together with device platforms based on other materials. This review will provide a comprehensive review on single-crystalline complex-oxide membranes technology developed thus far: how they are synthesized, methods to release them from the substrate, and their outstanding properties and applications.

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Section: Applications Of Heterogeneously Integrated Membranesmentioning

confidence: 99%

A review on recent advances in fabricating freestanding single-crystalline complex-oxide membranes and its applications

Park

et al. 2023

Phys. Scr.

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“…The V BR -L GD linearity is expected to be further improved by eliminating any parasitic bulk/surface leakage paths and passivation including extreme permittivity materials. 29) The V BR -R on,sp trade-off can be further improved by utilizing accumulation channels, improved channel/buffer stack engineering to improve channel mobility in conjunction with minimizing reverse leakage to prevent premature breakdown.…”

Section: -2mentioning

confidence: 99%

4.4 kV β-Ga₂O₃ MESFETs with power figure of merit exceeding 100 MW cm⁻²

Bhattacharyya¹,

Sharma²,

Alema³

et al. 2022

Appl. Phys. Express

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β-Ga2O3 metal-semiconductor field-effect transistors are realized with superior reverse breakdown voltages (VBR) and ON currents (IDMAX). A sandwiched SiNx dielectric field-plate design is utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with LGD=34.5μm exhibits an IDMAX of 56 mA/mm, a high ION/IOFF ratio >108 and a very low reverse leakage until catastrophic breakdown at ∼4.4kV. A power figure of merit (PFOM) of 132 MW/cm2 was calculated for a VBR of ∼4.4kV. The reported results are the first >4kV-class Ga2O3 transistors to surpass the theoretical FOM of Silicon.

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“…[10][11][12][13][14] Moreover, we demonstrated the incorporation of extremepermittivity dielectrics, specifically barium titanate (BaTiO 3 ), to AlGaN/GaN HEMTs with record-high electric field strength. [15] However, when depositing BaTiO 3 on III-nitride semiconductors using radio frequency (RF) sputter techniques, the surface of the III-nitride semiconductor undergoes damage due to Ar ion bombardment. [16,17] This damage leads to the degradation of charge density and mobility in the 2D electron gas (2DEG).…”

Section: Introductionmentioning

confidence: 99%

“…To mitigate this issue, the implementation of a high-quality interlayer dielectric becomes crucial in preserving the desirable properties of the III-nitride layer from sputtering-induced damage. [12,15] In this study, we aim to investigate the electrical characteristics of BaTiO 3 /III-nitride transistors by employing Al 2 O 3 layers deposited by atomic layer deposition (ALD) as the interlayer dielectric with varying thicknesses. ALD is considered suitable for thinner gate oxide layers in highly scaled devices.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Interlayer Dielectric in BaTiO₃/III‐Nitride Transistors

Lee,

McGlone,

Ifatur Rahman

et al. 2024

Physica Rapid Research Ltrs

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This study investigated the impact of varying the thickness of the Al2O3 interlayer dielectric on the electrical characteristics of BaTiO3/III‐Nitride transistors. The findings revealed that a minimum thickness of 8 nm for the Al2O3 layer is crucial to maintain high device performance and protect against sputtering‐induced damage during BaTiO3 deposition. The fabricated BaTiO3/Al2O3/AlGaN/GaN HEMTs exhibited exceptional electrical properties, including a maximum current density of 700 mA/mm, an on‐resistance of 5 Ω·mm, an ION/IOFF ratio of 107, a subthreshold slope of 119 mV/dec, and significantly reduced gate leakage current. The devices with the optimal 8 nm Al2O3 thickness demonstrated excellent agreement between theoretical and experimental values for effective mobility, achieving a value of 1188 cm2/V·s at a 2DEG density of 1013 cm‐2. Furthermore, the study confirmed that increasing the Al2O3 thickness also improved the quality of interface charge density, as evidenced by the results obtained from capacitance‐voltage (CV) measurements. These findings highlight the critical role of controlling the Al2O3 thickness in optimizing the electrical characteristics and overall performance of BaTiO3/III‐Nitride transistors.This article is protected by copyright. All rights reserved.

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Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Cited by 17 publications

References 33 publications

A review on recent advances in fabricating freestanding single-crystalline complex-oxide membranes and its applications

A review on recent advances in fabricating freestanding single-crystalline complex-oxide membranes and its applications

4.4 kV β-Ga₂O₃ MESFETs with power figure of merit exceeding 100 MW cm⁻²

Investigation of Interlayer Dielectric in BaTiO₃/III‐Nitride Transistors

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Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

Cited by 17 publications

References 33 publications

A review on recent advances in fabricating freestanding single-crystalline complex-oxide membranes and its applications

A review on recent advances in fabricating freestanding single-crystalline complex-oxide membranes and its applications

4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2

Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors

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Product

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4.4 kV β-Ga₂O₃ MESFETs with power figure of merit exceeding 100 MW cm⁻²

Investigation of Interlayer Dielectric in BaTiO₃/III‐Nitride Transistors