Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch

Tomioka, Katsuhiro; Yoshimura, Masashi; Nakai, Eiji; Ishizaka, Fumiya; Fukui, Takashi

doi:10.1109/iedm.2013.6724557

Cited by 30 publications

(22 citation statements)

References 5 publications

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“…To break this limit, different types of devices have been proposed based on various mechanisms. Tunnel FETs (TFET) based on band-toband tunneling demonstrate SS below 30 mV/dec [1]. Nevertheless, the sensitivity of SS to gate voltage leads to a worse average SS over the entire subthreshold region [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…Tunnel FETs (TFET) based on band-toband tunneling demonstrate SS below 30 mV/dec [1]. Nevertheless, the sensitivity of SS to gate voltage leads to a worse average SS over the entire subthreshold region [1][2][3]. Impact-ionization MOS (IMOS) achieves sub-5 mV/dec SS based on avalanche breakdown [4], though requiring high V DS and suffering from reliability issues.…”

Section: Introductionmentioning

confidence: 99%

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A Schottky-barrier silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 decades of current

Zhang

Marchi

Gaillardon

et al. 2014

2014 IEEE International Electron Devices Meeting

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Schottky-barrier silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 decades of current

Zhang

Marchi

Gaillardon

et al. 2014

2014 IEEE International Electron Devices Meeting

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“…As illustrated in Fig. 12, the equivalent total transistor capacitance forms as an ac voltage divider in series with the input coupling capacitance , and affects in the ways of (12) where (13) As a result, a large results in excessive , which can lower the of the rectifier. Fig.…”

Section: A Transistor Sizing and Coupling Capacitance Optimizationsmentioning

confidence: 99%

“…By taking advantages of the band-to-band tunneling induced carrier injection mechanism, TFETs, in principle, are able to achieve a sub-thermal energy switching (sub-60 mV/decade) with a high on-off current ratio at reduced supply voltages. The advancement in the TFET on-current improvement with improved gate-electrostatic control, low-bandgap material and tunneling junction engineering [9]- [12], as well as the process development of the heterogeneous integrations [13] has shown its prominent potential to extend the technology roadmap with optimal energy efficiency beyond the CMOS limit. Lots of efforts have also been made on TFET-based circuit and architecture designs, compact model development, reliability evaluation, and variation analysis [14]- [18] to bridge the device innovations with the practical circuit and system design requirements.…”

Section: Introductionmentioning

confidence: 99%

Tunnel FET RF Rectifier Design for Energy Harvesting Applications

Liu

Vaddi

et al. 2014

IEEE J. Emerg. Sel. Topics Circuits Syst.

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Radio-frequency (RF)-powered energy harvesting systems have offered new perspectives in various scientific and clinical applications such as health monitoring, bio-signal acquisition, and battery-less data-transceivers. In such applications, an RF rectifier with high sensitivity, high power conversion efficiency (PCE) is critical to enable the utilization of the ambient RF signal power. In this paper, we explore the high PCE advantage of the steep-slope III-V heterojunction tunnel field-effect transistor (HTFET) RF rectifiers over the Si FinFET baseline design for RF-powered battery-less systems. We investigate the device characteristics of HTFETs to improve the sensitivity and PCE of the RF rectifiers. Different topologies including the two-transistor (2-T) and four-transistor (4-T) complementary-HTFET designs, and the n-type HTFET-only designs are evaluated with design parameter optimizations to achieve high PCE and high sensitivity. The performance evaluation of the optimized 4-T cross-coupled HTFET rectifier has shown an over 50% PCE with an RF input power ranging from dBm to dBm, which significantly extends the RF input power range compared to the baseline Si FinFET design. A maximum PCE of 84% and 85% has been achieved in the proposed 4-T N-HTFET-only rectifier at dBm input power and the 4-T cross-coupled HTFET rectifier atdBm input power, respectively. The capability of obtaining a high PCE at a low RF input power range reveals the superiority of the HTFET RF rectifiers for battery-less energy harvesting applications.Index Terms-Energy harvesting, power conversion efficiency, radio-frequency (RF)-powered systems, RF rectifier, steep subthreshold slope, tunnel field-effect transistors (FETs), III-V semiconductor.

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“…Later on, a further improvement of oncurrent of 180 µA/µm has been achieved by Zhou et al [8] in a GaSb-InAs TFET. Recent advancement in complementary TFET process [9,10] has further highlighted both the performance improvement and process compatibility for TFET technology.…”

Section: A Tunnel Fet Device Designmentioning

confidence: 99%

Enabling Power-Efficient Designs with III-V Tunnel FETs

Kim

Liu

Swaminathan

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high g m /I DS , unidirectional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.Index Terms -Steep-slope devices, ultra-low power, lowvoltage, III-V Tunnel FET (TFET).

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Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch

Cited by 30 publications

References 5 publications

A Schottky-barrier silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 decades of current

A Schottky-barrier silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 decades of current

Tunnel FET RF Rectifier Design for Energy Harvesting Applications

Enabling Power-Efficient Designs with III-V Tunnel FETs

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