2008
DOI: 10.1016/j.orgel.2008.08.010
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Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography

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Cited by 11 publications
(5 citation statements)
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“…In the inset of the figure, the J-V characteristics of a Au/P3HT/Al Schottky diode with an active area of 20ϫ 20 m 2 is reported for comparison. 16 The P3HT/ZnO junction shows a high rectifying ratio of 10 5 at Ϯ4 V. A remarkable feature is the high current density obtained at 4 V, nearly 10 4 A / cm 2 , which is more than five orders of magnitude higher than in the P3HT device. Moreover, the reverse current is nearly constant up to Ϫ3.5 V and significantly lower than in Al/ZnO/Ag Schottky diodes of Ref.…”
mentioning
confidence: 86%
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“…In the inset of the figure, the J-V characteristics of a Au/P3HT/Al Schottky diode with an active area of 20ϫ 20 m 2 is reported for comparison. 16 The P3HT/ZnO junction shows a high rectifying ratio of 10 5 at Ϯ4 V. A remarkable feature is the high current density obtained at 4 V, nearly 10 4 A / cm 2 , which is more than five orders of magnitude higher than in the P3HT device. Moreover, the reverse current is nearly constant up to Ϫ3.5 V and significantly lower than in Al/ZnO/Ag Schottky diodes of Ref.…”
mentioning
confidence: 86%
“…16 The junctions were built on a Si n + wafer coated with 100 nm thermal silicon dioxide. Bottom electrodes were fabricated by e-beam assisted evaporation and patterning of a 40 nm thick gold film; a thin Ti layer was first deposited for promoting adhesion.…”
mentioning
confidence: 99%
“…In recent years, organic semiconductors have received considerable attention in the fields of electronic and photonic devices, due to low fabrication cost, low thermal budget requirements, high mechanical flexibility and simple fabricating process compared with the inorganic counterparts [30]. Teo et al [23] fabricated an organic 1D1R device as a write-once-read-many-times memory (WORM).…”
Section: Rectifying Diode-based 1d1r Structure In Rram Passive Crossbmentioning
confidence: 99%
“…Ti/TiO 2 /Pt [25] 2×10 3 A/cm 2 @3 V 10 5 @±3 V Room temperature Pt/TiO 2 /Ti [27] 3×10 5 A/cm 2 @1 V 10 9 @1 V 100°C Al/P3HT:PCBM/PEDOT/ITO [23] -10 3 @±1 V -P3HT/n-ZnO [24] 10 4 A/cm 2 @4 V 10 5 @±4 V -Au/P3HT/PVP/Al [30] -1×10 2 -2×10 3 60°C Polymer-based diodes Au/OPV5/Ti [30] 0.3-0.8 A/cm 2 10 2 @4V 40°C Figure 8 (a) The programming process (PRG) for the WORM device, with a current compliance of 10 mA. Inset is the typical I-V curve of the antifuse-type WORM memory; (b) probability plots of the forward current distributions for the antifuse memory cells before and after programming.…”
Section: Self-rectifying 1r Structure In Rram Passive Crossbar Arraymentioning
confidence: 99%
“…Thin, functional, organic, and polymeric films for electronic devices have attracted significant interest industrially due to the promise of enabling manufacture of equivalents to existing solutions much more efficiently and at much lower cost. Examples of this include organic light emitting diodes (OLEDs),1 white OLEDs2 and light emitting electrochemical cells,3, 4 light harvesting devices such as small molecule photovoltaics5 and polymer photovoltaics (OPVs),6 color changing devices for displays such as e‐paper, LCDs, and electrochromics (ECs),7 logic circuitry such as transistors,8 diodes,9 and memory elements,10 and energy storage devices such as thin film batteries11 and supercapacitors 12. Advantages of the many organic‐based materials discussed above, over their well‐established inorganic counterparts, include processability to yield printable materials, mechanical flexibility to allow use of flexible and organic substrates, and lower power consumption in many cases 13.…”
Section: Introductionmentioning
confidence: 99%